CAS OpenIR  > 中科院上海应用物理研究所2011-2020年
Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation
Peng, HY; Li, YF; Lin, WN; Wang, YZ; Gao(高兴宇), XY; Wu, T
2012
Source PublicationSCIENTIFIC REPORTS
ISSN2045-2322
Volume2
AbstractIntensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxides are strongly correlated electron systems, and their electronic properties are critically affected by the electron-electron interactions. Here, using NiO as an example, we show that rationally adjusting the stoichiometry and the associated defect characteristics enables controlled room temperature conversions between two distinct RS modes, i.e., nonvolatile memory switching and volatile threshold switching, within a single device. Moreover, from first-principles calculations and x-ray absorption spectroscopy studies, we found that the strong electron correlations and the exchange interactions between Ni and O orbitals play deterministic roles in the RS operations.
Language英语
Funding Project应物所项目组
WOS IDWOS:000305283400002
Citation statistics
Cited Times:86[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/13128
Collection中科院上海应用物理研究所2011-2020年
Recommended Citation
GB/T 7714
Peng, HY,Li, YF,Lin, WN,et al. Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation[J]. SCIENTIFIC REPORTS,2012,2.
APA Peng, HY,Li, YF,Lin, WN,Wang, YZ,Gao,&Wu, T.(2012).Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation.SCIENTIFIC REPORTS,2.
MLA Peng, HY,et al."Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation".SCIENTIFIC REPORTS 2(2012).
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