CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing
Koseva, R; Monch, I; Meier, D; Schumann, J; Arndt, KF; Schultz, L; Zhao, B; Schmidt, OG
2012
Source PublicationTHIN SOLID FILMS
ISSN0040-6090
Volume520Issue:17
AbstractBismuth thin films were grown on oxidized Si substrates by electron beam evaporation. The films showed clear tendency to form hillocks inducing large surface roughness. The evolution of hillocks with film thickness and deposition rate was studied. In order to improve the surface quality of the Bi films a nanoscale mechanical polishing was performed. Upon polishing. hillocks-free Bi thin films were obtained without influencing the crystalline structure and the resistivity of the films. The achieved film surface quality allows to prepare high quality Bi Hall probes with an active area down to the nm(2) range promising for advanced device performance. (C) 2012 Elsevier B.V. All rights reserved.
Language英语
Funding Project应物所项目组
WOS IDWOS:000305770200018
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/13156
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Koseva, R,Monch, I,Meier, D,et al. Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing[J]. THIN SOLID FILMS,2012,520(17).
APA Koseva, R.,Monch, I.,Meier, D.,Schumann, J.,Arndt, KF.,...&Schmidt, OG.(2012).Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing.THIN SOLID FILMS,520(17).
MLA Koseva, R,et al."Evolution of hillocks in Bi thin films and their removal upon nanoscale mechanical polishing".THIN SOLID FILMS 520.17(2012).
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