CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
The QE numerical simulation of PEA semiconductor photocathode
Li, XD(李旭东); Gu, Q(顾强); Zhang, M(张猛); Zhao, MH(赵明华)
2012
Source PublicationCHINESE PHYSICS C
ISSN1674-1137
Volume36Issue:6
AbstractSeveral kinds of models have already been proposed to explain the photoemission process. The exact photoemission theory of the semiconductor photocathode was not well established after decades of research. In this paper an integral equation of quantum efficiency (QE) is constructed to describe the photoemission of positive electron affinity (PEA) of the semiconductor photocathode based on the three-step photoemission model. Various factors (e.g., forbidden band gap, electron affinity, photon energy, incident, angle, degree of polarization, refractive index, extinction coefficient, initial and final electron energy, relaxation time, external electric field and so on) have an impact on the QE of the PEA semiconductor photocathode, which are entirely expressed in the QE equation. In addition, a simulation code is also programmed to calculate the QE of the K2CsSb photocathode theoretically at 532 nm wavelength. By and large, the result is in line with the expected experimental value. The reasons leading to the distinction between the experimental and theoretical QE are discussed.
Language英语
Funding Project应物所项目组
WOS IDWOS:000305035000009
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/13322
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Li, XD,Gu, Q,Zhang, M,et al. The QE numerical simulation of PEA semiconductor photocathode[J]. CHINESE PHYSICS C,2012,36(6).
APA Li, XD,Gu, Q,Zhang, M,&Zhao, MH.(2012).The QE numerical simulation of PEA semiconductor photocathode.CHINESE PHYSICS C,36(6).
MLA Li, XD,et al."The QE numerical simulation of PEA semiconductor photocathode".CHINESE PHYSICS C 36.6(2012).
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