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Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO3 buffer layer
Wang, YZ; Cao, L; Qi, DC; Chen, W; Wee, ATS; Gao, XY(高兴宇)
2012
Source PublicationJOURNAL OF APPLIED PHYSICS
ISSN0021-8979
Volume112Issue:3
AbstractWe demonstrate that the interfacial hole injection barrier Delta(h) between p-type organic materials (i.e., CuPc and pentacene) and Co substrate can be tuned by the insertion of a MoO3 buffer layer. Using ultraviolet photoemission spectroscopy, it was found that the introduction of MoO3 buffer layer effectively reduces the hole injection barrier from 0.8 eV to 0.4 eV for the CuPc/Co interface, and from 1.0 eV to 0.4 eV for the pentacene/Co interface, respectively. In addition, by varying the thickness of the buffer, the tuning effect of Delta(h) is shown to be independent of the thickness of MoO3 interlayer at both CuPc/Co and pentacene/Co interfaces. This Fermi level pinning effect can be explained by the integer charge-transfer model. Therefore, the MoO3 buffer layer has the potential to be applied in p-type organic spin valve devices to improve the device performance via reducing the interfacial hole injection barrier. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4740455]
Language英语
Funding Project应物所项目组
WOS IDWOS:000308335400047
Citation statistics
Cited Times:11[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/13330
Collection中科院上海应用物理研究所2011-2020年
Recommended Citation
GB/T 7714
Wang, YZ,Cao, L,Qi, DC,et al. Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO3 buffer layer[J]. JOURNAL OF APPLIED PHYSICS,2012,112(3).
APA Wang, YZ,Cao, L,Qi, DC,Chen, W,Wee, ATS,&Gao, XY.(2012).Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO3 buffer layer.JOURNAL OF APPLIED PHYSICS,112(3).
MLA Wang, YZ,et al."Tuning the interfacial hole injection barrier between p-type organic materials and Co using a MoO3 buffer layer".JOURNAL OF APPLIED PHYSICS 112.3(2012).
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