CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer
Song, Sannian; Song, Zhitang; Peng, Cheng; Gao, Lina; Gu, Yifeng; Zhang, Zhonghua; Lv, Yegang; Yao, Dongning; Wu, Liangcai; Liu, Bo
2013
Source PublicationNANOSCALE RESEARCH LETTERS
ISSN1931-7573
Volume8
AbstractA phase change memory (PCM) cell with atomic layer deposition titanium dioxide bottom heating layer is investigated. The crystalline titanium dioxide heating layer promotes the temperature rise in the AlSb3Te layer which causes the reduction in the reset voltage compared to a conventional phase change memory cell. The improvement in thermal efficiency of the PCM cell mainly originates from the low thermal conductivity of the crystalline titanium dioxide material. Among the various thicknesses of the TiO2 buffer layer, 4 nm was the most appropriate thickness that maximized the improvement with negligible sacrifice of the other device performances, such as the reset/set resistance ratio, voltage window, and endurance.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000320155700001
Citation statistics
Cited Times:7[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/13851
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Song, Sannian,Song, Zhitang,Peng, Cheng,et al. Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer[J]. NANOSCALE RESEARCH LETTERS,2013,8.
APA Song, Sannian.,Song, Zhitang.,Peng, Cheng.,Gao, Lina.,Gu, Yifeng.,...&Liu, Bo.(2013).Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer.NANOSCALE RESEARCH LETTERS,8.
MLA Song, Sannian,et al."Performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer".NANOSCALE RESEARCH LETTERS 8(2013).
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