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Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts
Gong, Wenbin; Zhang, Wei; Ren, Cuilan; Ke, Xuezhi; Wang, Song; Huai, Ping; Zhang, Wenqing; Zhu, Zhiyuan
2013
Source PublicationAPPLIED PHYSICS LETTERS
ISSN0003-6951; 1077-3118
Volume103Issue:14
AbstractStrain effects on tuning the interface binding as well as the charge doping at metal-graphene contacts have been investigated by using density functional theory calculations. A realizable tensile strain is found to be very effective in enhancing the interface binding as well as shifting the Fermi level. Particularly, an enhancement of the binding energy up to 315% can be achieved because of the dipole-dipole interaction. Our results presented here show that strain is an efficient way to overcome the weak binding problem at metal-graphene interface, and will motivate active experimental efforts in improving the performance of graphene-based devices. (C) 2013 AIP Publishing LLC.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000325488500091
Citation statistics
Cited Times:3[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/13914
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Gong, Wenbin,Zhang, Wei,Ren, Cuilan,et al. Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts[J]. APPLIED PHYSICS LETTERS,2013,103(14).
APA Gong, Wenbin.,Zhang, Wei.,Ren, Cuilan.,Ke, Xuezhi.,Wang, Song.,...&Zhu, Zhiyuan.(2013).Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts.APPLIED PHYSICS LETTERS,103(14).
MLA Gong, Wenbin,et al."Strain-controlled interface engineering of binding and charge doping at metal-graphene contacts".APPLIED PHYSICS LETTERS 103.14(2013).
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