Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| THz wave emission of GaAs induced by He+ ion implantation | |
| Yang, Kang; Cao, Jianqing; Huang, Can; Ji, Te; Zhang, Zengyan; Liu, Qi; Wu, Shengwei; Lin, Jun; Zhao, Hongwei; Zhu, Zhiyong | |
| 2013 | |
| Source Publication | NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
 |
| ISSN | 0168-583X |
| Volume | 307Pages:CONCATENATE(Sheet1!I377,-Sheet1!J377) |
| Abstract | Semi-Insulating Gallium Arsenide (SI-GaAs) was implanted with 1.5 MeV He+ ions and THz photoconductive antenna (PCA) was prepared on the implanted SI-GaAs surface. The antenna was applied as the THz wave emission source of a terahertz time domain spectroscopy (THz-TDS) and the THz wave emission ability was studied as a function of the implantation dose. It is found that the THz signal intensity increases with increase of implantation dose, and after reaching to a peak value the THz signal intensity decreases with further implantation. The best THz emission ability was achieved at a dose value between 1 x 10(15) and 1 x 10(16) ions/cm(2). It is believed that the implantation induced defects in the 1 mu m-thick surface area are responsible for the enhanced THz emission ability. The work proved that better THz photoconductive antenna than that made by low-temperature-grown GaAs (LT-GaAs) can be produced through He-ion implantation at proper dose. (C) 2013 Elsevier B.V. All rights reserved. |
| Indexed By | SCI |
| Language | 英语 |
| Funding Project | 应物所项目组 |
| WOS ID | WOS:000321722200044 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/13971 |
| Collection | 中科院上海应用物理研究所2011-2020年 |
| Recommended Citation GB/T 7714 | Yang, Kang,Cao, Jianqing,Huang, Can,et al. THz wave emission of GaAs induced by He+ ion implantation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,307:CONCATENATE(Sheet1!I377,-Sheet1!J377). |
| APA | Yang, Kang.,Cao, Jianqing.,Huang, Can.,Ji, Te.,Zhang, Zengyan.,...&Zhu, Zhiyong.(2013).THz wave emission of GaAs induced by He+ ion implantation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,307,CONCATENATE(Sheet1!I377,-Sheet1!J377). |
| MLA | Yang, Kang,et al."THz wave emission of GaAs induced by He+ ion implantation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 307(2013):CONCATENATE(Sheet1!I377,-Sheet1!J377). |
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| File Name/Size | DocType | Version | Access | License | ||
| THz wave emission of（749KB） | 开放获取 | CC BY-NC-SA | View Application Full Text | |||
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