CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
THz wave emission of GaAs induced by He+ ion implantation
Yang, Kang; Cao, Jianqing; Huang, Can; Ji, Te; Zhang, Zengyan; Liu, Qi; Wu, Shengwei; Lin, Jun; Zhao, Hongwei; Zhu, Zhiyong
2013
Source PublicationNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
ISSN0168-583X
Volume307Pages:CONCATENATE(Sheet1!I377,-Sheet1!J377)
AbstractSemi-Insulating Gallium Arsenide (SI-GaAs) was implanted with 1.5 MeV He+ ions and THz photoconductive antenna (PCA) was prepared on the implanted SI-GaAs surface. The antenna was applied as the THz wave emission source of a terahertz time domain spectroscopy (THz-TDS) and the THz wave emission ability was studied as a function of the implantation dose. It is found that the THz signal intensity increases with increase of implantation dose, and after reaching to a peak value the THz signal intensity decreases with further implantation. The best THz emission ability was achieved at a dose value between 1 x 10(15) and 1 x 10(16) ions/cm(2). It is believed that the implantation induced defects in the 1 mu m-thick surface area are responsible for the enhanced THz emission ability. The work proved that better THz photoconductive antenna than that made by low-temperature-grown GaAs (LT-GaAs) can be produced through He-ion implantation at proper dose. (C) 2013 Elsevier B.V. All rights reserved.
Indexed BySCI
Language英语
Funding Project应物所项目组
WOS IDWOS:000321722200044
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/13971
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Yang, Kang,Cao, Jianqing,Huang, Can,et al. THz wave emission of GaAs induced by He+ ion implantation[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,2013,307:CONCATENATE(Sheet1!I377,-Sheet1!J377).
APA Yang, Kang.,Cao, Jianqing.,Huang, Can.,Ji, Te.,Zhang, Zengyan.,...&Zhu, Zhiyong.(2013).THz wave emission of GaAs induced by He+ ion implantation.NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS,307,CONCATENATE(Sheet1!I377,-Sheet1!J377).
MLA Yang, Kang,et al."THz wave emission of GaAs induced by He+ ion implantation".NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS 307(2013):CONCATENATE(Sheet1!I377,-Sheet1!J377).
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