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Ultra-sensitive nucleic acids detection with electrical nanosensors based on CMOS-compatible silicon nanowire field-effect transistors | |
Lu, Na; Gao, Anran; Dai, Pengfei; Li, Tie; Wang, Yi; Gao, Xiuli; Song, Shiping; Fan, Chunhai; Wang, Yuelin | |
2013 | |
Source Publication | METHODS
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ISSN | 1046-2023; 1095-9130 |
Volume | 63Issue:3Pages:CONCATENATE(Sheet1!I384,-Sheet1!J384) |
Abstract | Silicon nanowire field-effect transistors (SiNW-FETs) have recently emerged as a type of powerful nanoelectronic biosensors due to their ultrahigh sensitivity, selectivity, label-free and real-time detection capabilities. Here, we present a protocol as well as guidelines for detecting DNA with complementary metal oxide semiconductor (CMOS) compatible SiNW-FET sensors. SiNWs with high surface-to-volume ratio and controllable sizes were fabricated with an anisotropic self-stop etching technique. Probe DNA molecules specific for the target DNA were covalently modified onto the surface of the SiNWs. The SiNW-FET nanosensors exhibited an ultrahigh sensitivity for detecting the target DNA as low as 1 fM and good selectivity for discrimination from one-base mismatched DNA. (C) 2013 Elsevier Inc. All rights reserved. |
Indexed By | SCI |
Language | 英语 |
Funding Project | 应物所项目组 |
WOS ID | WOS:000326135800003 |
Citation statistics | |
Document Type | 期刊论文 |
Identifier | http://ir.sinap.ac.cn/handle/331007/13978 |
Collection | 中科院上海应用物理研究所2011-2020年 |
Recommended Citation GB/T 7714 | Lu, Na,Gao, Anran,Dai, Pengfei,et al. Ultra-sensitive nucleic acids detection with electrical nanosensors based on CMOS-compatible silicon nanowire field-effect transistors[J]. METHODS,2013,63(3):CONCATENATE(Sheet1!I384,-Sheet1!J384). |
APA | Lu, Na.,Gao, Anran.,Dai, Pengfei.,Li, Tie.,Wang, Yi.,...&Wang, Yuelin.(2013).Ultra-sensitive nucleic acids detection with electrical nanosensors based on CMOS-compatible silicon nanowire field-effect transistors.METHODS,63(3),CONCATENATE(Sheet1!I384,-Sheet1!J384). |
MLA | Lu, Na,et al."Ultra-sensitive nucleic acids detection with electrical nanosensors based on CMOS-compatible silicon nanowire field-effect transistors".METHODS 63.3(2013):CONCATENATE(Sheet1!I384,-Sheet1!J384). |
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