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AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN
Cheng, J; Zhou, J; Xu, W; Dong, P; chengj@njupt.edu.cn; zhoujing@sinap.ac.cn; xuw@ihep.ac.cn; dongp@njupt.edu.cn
2014
Source PublicationMODERN PHYSICS LETTERS B
ISSN0217-9849
Volume28Issue:4
AbstractIn this paper, we present a first principle investigation on Fe-doped GaN with wurtzite and zinc-blend structure using full potential density functional calculations. Data point out that the magnetic behavior of Fe-doped GaN system is strongly dependent on Fe doping configurations. In agreement with the experimental reports, and independently by doping, antiferromagnetism occurs in the zinc-blend structure, while in the wurtzite structure ferromagnetism depends on the Fe doping configurations. Detailed analyses combined with density of state calculations support the assignment that the ferromagnetism is closely related to the impurity band at the origin of the hybridization of Fe 3d and N 2p states in the Fe-doped GaN of wurtzite phase.
KeywordElectronic-structure Materials Design 1st Principles Spintronics Ferromagnetism
Indexed BySCI
Language英语
WOS IDWOS:000331280400010
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/14000
Collection中科院上海应用物理研究所2011-2019年
Corresponding Authorchengj@njupt.edu.cn; zhoujing@sinap.ac.cn; xuw@ihep.ac.cn; dongp@njupt.edu.cn
Recommended Citation
GB/T 7714
Cheng, J,Zhou, J,Xu, W,et al. AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN[J]. MODERN PHYSICS LETTERS B,2014,28(4).
APA Cheng, J.,Zhou, J.,Xu, W.,Dong, P.,chengj@njupt.edu.cn.,...&dongp@njupt.edu.cn.(2014).AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN.MODERN PHYSICS LETTERS B,28(4).
MLA Cheng, J,et al."AB INITIO INVESTIGATIONS OF THE MAGNETISM IN DILUTED MAGNETIC SEMICONDUCTOR Fe-DOPED GaN".MODERN PHYSICS LETTERS B 28.4(2014).
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