CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas
Zhang, ZH; Song, SN; Song, ZT; Cheng, Y; Peng, C; Zhang, L; Cao, DC; Guo, XH; Yin, WJ; Wu, LC; Liu, B; zhzhang@mail.sim.ac.cn; songsannian@mail.sim.ac.cn
2014
Source PublicationMICROELECTRONIC ENGINEERING
ISSN0167-9317
Volume115Pages:51—54
AbstractInductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl-2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx, on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process. (C) 2013 Elsevier B.V. All rights reserved.
KeywordPhase-change Materials Memories
Indexed BySCI
Language英语
WOS IDWOS:000330502700011
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/14032
Collection中科院上海应用物理研究所2011-2019年
Corresponding Authorzhzhang@mail.sim.ac.cn; songsannian@mail.sim.ac.cn
Recommended Citation
GB/T 7714
Zhang, ZH,Song, SN,Song, ZT,et al. Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas[J]. MICROELECTRONIC ENGINEERING,2014,115:51—54.
APA Zhang, ZH.,Song, SN.,Song, ZT.,Cheng, Y.,Peng, C.,...&songsannian@mail.sim.ac.cn.(2014).Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas.MICROELECTRONIC ENGINEERING,115,51—54.
MLA Zhang, ZH,et al."Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas".MICROELECTRONIC ENGINEERING 115(2014):51—54.
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