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| Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas | |
| Zhang, ZH; Song, SN; Song, ZT; Cheng, Y; Peng, C; Zhang, L; Cao, DC; Guo, XH; Yin, WJ; Wu, LC; Liu, B; zhzhang@mail.sim.ac.cn; songsannian@mail.sim.ac.cn | |
| 2014 | |
| Source Publication | MICROELECTRONIC ENGINEERING
 |
| ISSN | 0167-9317 |
| Volume | 115Pages:51—54 |
| Abstract | Inductively coupled plasmas etching of Al1.3Sb3Te (AST) films were studied using Cl-2/BCl3 gas mixture. The effects of gas-mixing ratio, bias power, gas pressure, applying ICP power on the variations of etch rate, etch profiles, and surface roughness were investigated, respectively. In addition, the X-ray photoelectron spectroscopy compositional depth profiling of the blank etched AST shows accumulation of low volatile SbClx, on the etched surface. Al shows the lowest halogenide during the etching process as the volatile chlorides compounds can easily be removed from the surface during the etching process. (C) 2013 Elsevier B.V. All rights reserved. |
| Keyword | Phase-change Materials Memories |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000330502700011 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/14032 |
| Collection | 中科院上海应用物理研究所2011-2020年 |
| Corresponding Author | zhzhang@mail.sim.ac.cn; songsannian@mail.sim.ac.cn |
| Recommended Citation GB/T 7714 | Zhang, ZH,Song, SN,Song, ZT,et al. Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas[J]. MICROELECTRONIC ENGINEERING,2014,115:51—54. |
| APA | Zhang, ZH.,Song, SN.,Song, ZT.,Cheng, Y.,Peng, C.,...&songsannian@mail.sim.ac.cn.(2014).Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas.MICROELECTRONIC ENGINEERING,115,51—54. |
| MLA | Zhang, ZH,et al."Characteristics and mechanism of Al1.3Sb3Te etched by Cl-2/BCl3 inductively coupled plasmas".MICROELECTRONIC ENGINEERING 115(2014):51—54. |
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| Characteristics and （1113KB） | 开放获取 | CC BY-NC-SA | View Application Full Text | |||
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