CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Outgassing analysis of molecular glass photoresists under EUV irradiation
Chen, L; Xu, J; Yuan, H; Yang, SM; Wang, LS; Wu, YQ; Zhao, J; Chen, M; Liu, HG; Li, SY; Tai, RZ; Wang, SQ; Yang, GQ; g1704@iccas.ac.cn; gqyang@iccas.ac.cn
2014
Source PublicationSCIENCE CHINA-CHEMISTRY
ISSN1674-7291
Volume57Issue:12Pages:1746—1750
AbstractA device was designed and assembled to analyze the outgassing of molecular glass (MG) photoresists under extreme ultraviolet (EUV) exposure. The outgassing of the photoresists with different components and different concentrations of tert-butoxycarbonyl (t-Boc), photo-generated acid (PAG), and acid quencher was systematically investigated. Based on experiments, some solutions for reducing the outgassing of MG photoresists were proposed.
KeywordLithography
Indexed BySCI
Language英语
WOS IDWOS:000346047500018
Citation statistics
Cited Times:8[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/14296
Collection中科院上海应用物理研究所2011-2019年
Corresponding Authorg1704@iccas.ac.cn; gqyang@iccas.ac.cn
Recommended Citation
GB/T 7714
Chen, L,Xu, J,Yuan, H,et al. Outgassing analysis of molecular glass photoresists under EUV irradiation[J]. SCIENCE CHINA-CHEMISTRY,2014,57(12):1746—1750.
APA Chen, L.,Xu, J.,Yuan, H.,Yang, SM.,Wang, LS.,...&gqyang@iccas.ac.cn.(2014).Outgassing analysis of molecular glass photoresists under EUV irradiation.SCIENCE CHINA-CHEMISTRY,57(12),1746—1750.
MLA Chen, L,et al."Outgassing analysis of molecular glass photoresists under EUV irradiation".SCIENCE CHINA-CHEMISTRY 57.12(2014):1746—1750.
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