CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid
Li, XH; Cai, YY; Gong, LH; Fu, W; Wang, KX; Bao, HL; Wei, X; Chen, JS; weixiao@sjtu.edu.cn; chemcj@sjtu.edu.cn
2014
Source PublicationCHEMISTRY-A EUROPEAN JOURNAL
ISSN0947-6539
Volume20Issue:50Pages:16732—16737
AbstractA mild photochemical approach was applied to construct highly coupled metal-semiconductor dyads, which were found to efficiently facilitate the hydrogenation of nitrobenzene. Aniline was produced in excellent yield (>99 %, TOF: 1183) using formic acid as hydrogen source and water as solvent at room temperature. This general and green catalytic process is applicable to a wide range of nitroarenes without the involvement of high-pressure gases or sacrificial additives.
KeywordAromatic Nitro-compounds Catalytic-reduction Ambient Conditions Tandem Catalysis Gold Catalysts Efficient Nanoparticles Decomposition Generation Supports
Indexed BySCI
Language英语
WOS IDWOS:000346055800041
Citation statistics
Cited Times:32[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/14310
Collection中科院上海应用物理研究所2011-2019年
Corresponding Authorweixiao@sjtu.edu.cn; chemcj@sjtu.edu.cn
Recommended Citation
GB/T 7714
Li, XH,Cai, YY,Gong, LH,et al. Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid[J]. CHEMISTRY-A EUROPEAN JOURNAL,2014,20(50):16732—16737.
APA Li, XH.,Cai, YY.,Gong, LH.,Fu, W.,Wang, KX.,...&chemcj@sjtu.edu.cn.(2014).Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid.CHEMISTRY-A EUROPEAN JOURNAL,20(50),16732—16737.
MLA Li, XH,et al."Photochemically Engineering the Metal-Semiconductor Interface for Room-Temperature Transfer Hydrogenation of Nitroarenes with Formic Acid".CHEMISTRY-A EUROPEAN JOURNAL 20.50(2014):16732—16737.
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