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Local structure of AlSb2Te3 thin film studied by experimental and theoretical methods
Zhang, L; Song, SN; Xi, W; Li, L; He, Y; Lin, H; Song, ZT
2015
Source PublicationJOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS
Volume83Pages:52—57
Subtype期刊文献
AbstractLocal structure of AlSb2Te3 thin film was studied by experiments and theoretical calculations. Results show that both Sb and Te atoms are likely to be replaced by Al to form Al-Sb and Al-Te covalent bonds. At a smaller dopant concentration, Al atoms presumably incorporate into Sb2Te3 matrix by substitute Sb or Te atoms without spoiling its structural unit. Compared together with other reported data, for Al doping Sb2Te3 PCM material, optimizing Al content is a key criteria for its phase stability and electric performance. (C) 2015 Elsevier Ltd. All rights reserved.
KeywordPhase-change Materials Raman-scattering Memory Crystals
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/24495
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Zhang, L,Song, SN,Xi, W,et al. Local structure of AlSb2Te3 thin film studied by experimental and theoretical methods[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,2015,83:52—57.
APA Zhang, L.,Song, SN.,Xi, W.,Li, L.,He, Y.,...&Song, ZT.(2015).Local structure of AlSb2Te3 thin film studied by experimental and theoretical methods.JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,83,52—57.
MLA Zhang, L,et al."Local structure of AlSb2Te3 thin film studied by experimental and theoretical methods".JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS 83(2015):52—57.
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