CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon
Song, SN; Yao, DN; Song, ZT; Gao, LN; Zhang, ZH; Li, L; Shen, LL; Wu, LC; Liu, B; Cheng, Y; Feng, SL
2015
Source PublicationNANOSCALE RESEARCH LETTERS
Volume10Pages:1—5
Subtype期刊文献
AbstractPhase-change access memory (PCM) appears to be the strongest candidate for next-generation high-density nonvolatile memory. The fabrication of ultrahigh-density PCM depends heavily on the thin-film growth technique for the phase-changing chalcogenide material. In this study, Ge2Sb2Te5 (GST) and GeSb8Te thin films were deposited by plasma-enhanced atomic layer deposition (ALD) method using Ge [(CH3)(2) N](4), Sb [(CH3)(2) N](3), Te(C4H9)(2) as precursors and plasma-activated H-2 gas as reducing agent of the metallorganic precursors. Compared with GST-based device, GeSb8Te-based device exhibits a faster switching speed and reduced reset voltage, which is attributed to the growth-dominated crystallization mechanism of the Sb-rich GeSb8Te films. These results show that ALD is an attractive method for preparation of phase-change materials.
KeywordChemical-vapor-deposition
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/24527
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Song, SN,Yao, DN,Song, ZT,et al. Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon[J]. NANOSCALE RESEARCH LETTERS,2015,10:1—5.
APA Song, SN.,Yao, DN.,Song, ZT.,Gao, LN.,Zhang, ZH.,...&Feng, SL.(2015).Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon.NANOSCALE RESEARCH LETTERS,10,1—5.
MLA Song, SN,et al."Phase-change properties of GeSbTe thin films deposited by plasma-enchanced atomic layer depositon".NANOSCALE RESEARCH LETTERS 10(2015):1—5.
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