CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Preparation and characterization of p-type transparent conducting SnO thin films
Yang, TY; Zhao, J; Li, XL; Gao, XY; Xue, CF; Wu, YQ; Tai, RZ
2015
Source PublicationMATERIALS LETTERS
Volume139Pages:39—41
Subtype期刊文献
AbstractP-type transparent conducting SnO thin films with enhanced electronic properties were directly prepared using rf magnetron sputtering without post-deposition annealing. The preparation conditions were systemically investigated. The electronic properties, optical properties, structure and surface morphologies of the films were characterized. It was observed that the structure of the films has a great effect on the films' conductivity. A transparent p-n junction diode was obtained by growing an n-type SnO2:Sb film on a p-type SnO film deposited on a SiO2(1 0 0) substrate. The diode exhibits a distinct I-V rectifying characteristic, indicating that the SnO thin film and the corresponding fabrication method hold promise for use in industrial applications. (C) 2014 Elsevier B.V. All rights reserved.
KeywordTin Oxide Quartz
Indexed BySCI
Language英语
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/24540
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Yang, TY,Zhao, J,Li, XL,et al. Preparation and characterization of p-type transparent conducting SnO thin films[J]. MATERIALS LETTERS,2015,139:39—41.
APA Yang, TY.,Zhao, J.,Li, XL.,Gao, XY.,Xue, CF.,...&Tai, RZ.(2015).Preparation and characterization of p-type transparent conducting SnO thin films.MATERIALS LETTERS,139,39—41.
MLA Yang, TY,et al."Preparation and characterization of p-type transparent conducting SnO thin films".MATERIALS LETTERS 139(2015):39—41.
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