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Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity | |
Chen, HL; Dong, SH; Bai, ML; Cheng, NY; Wang, H; Li, ML; Du, HW; Hu, SX; Yang, YL; Yang, TY; Zhang, F; Gu, L; Meng, S; Hou, SM; Guo, XF | |
2015 | |
Source Publication | ADVANCED MATERIALS
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Volume | 27Issue:12Pages:2113—2120 |
Subtype | 期刊文献 |
Abstract | Low-voltage, low-cost, high-performance monolayer field-effect transistors are demonstrated, which comprise a densely packed, long-range ordered monolayer spin-coated from core-cladding liquid-crystalline pentathiophenes and a solution-processed high-k HfO2-based nanoscale gate dielectric. These monolayer field-effect transistors are light-sensitive and are able to function as reporters to convert analyte binding events into electrical signals with ultrahigh sensitivity (approximate to 10 ppb). |
Keyword | Self-assembled Monolayers Thin-film Transistors Organic Semiconductors Dielectric-relaxation Hybrid Dielectrics Carrier Mobility Transport Oxide |
Indexed By | SCI |
Language | 英语 |
Document Type | 期刊论文 |
Identifier | http://ir.sinap.ac.cn/handle/331007/24570 |
Collection | 中科院上海应用物理研究所2011-2020年 |
Recommended Citation GB/T 7714 | Chen, HL,Dong, SH,Bai, ML,et al. Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity[J]. ADVANCED MATERIALS,2015,27(12):2113—2120. |
APA | Chen, HL.,Dong, SH.,Bai, ML.,Cheng, NY.,Wang, H.,...&Guo, XF.(2015).Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity.ADVANCED MATERIALS,27(12),2113—2120. |
MLA | Chen, HL,et al."Solution-Processable, Low-Voltage, and High-Performance Monolayer Field-Effect Transistors with Aqueous Stability and High Sensitivity".ADVANCED MATERIALS 27.12(2015):2113—2120. |
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Solution-Processable(1993KB) | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Download |
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