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题名:
Decay of Free Radicals in Polycarbosilane Induced by gamma-Rays Irradiation
作者: Cheng, Y; Li, XH; Liu, WH; Wu, GZ; Wang, MH
刊名: CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE
出版日期: 2016
卷号: 37, 期号:3, 页码:595—599
关键词: SILICON-CARBIDE ; CONVERSION ; ESR
DOI: 10.7503/cjcu20150705
通讯作者: Wang, MH (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China.
文章类型: 期刊文献
英文摘要: The formation and decay behavior of the free radicals trapped in polycarbosilane (PCS) induced by gamma-rays irradiation in N-2 were investigated by electron spin resonance (ESR). ESR analysis showed that the trapped radicals induced by gamma-rays irradiation were assigned to Si radicals ( Si center dot "). The concentration of free radicals increased with absorbed dose linearly at the lower dose, and the G value of the radical formation was calculated to be 9. However, the concentration of free radicals tends to be saturated when the absorbed dose reached 200 kGy. Upon storage in N-2 at ambient temperature the free radicals decayed slowly with a half-life of 23 d. On the contrary, the free radicals decayed rapidly after the sample was exposed to air due to their oxidation, the half-life was only 8 h. The rate of radical decay was accelerated by annealing at elevated temperature, the free radicals trapped in PCS could be removed thoroughly after heating up to 250 degrees C in N-2.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000372872300028
ISSN号: 0251-0790
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/25678
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Cheng, Y,Li, XH,Liu, WH,et al. Decay of Free Radicals in Polycarbosilane Induced by gamma-Rays Irradiation[J]. CHEMICAL JOURNAL OF CHINESE UNIVERSITIES-CHINESE,2016-01-01,37(3):595—599.
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