Zhao, ZT (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys SINAP, Shanghai 201800, Peoples R China.
文章类型:
期刊文献
英文摘要:
C-band RF acceleration is a crucial technology for the compact Free Electron Laser (FEL) facility at the Shanghai Institute of Applied Physics (SINAP), Chinese Academy of Sciences. A project focusing on C-band RF acceleration technology was launched in 2008, based on high-gradient accelerating structures powered by klystron and pulse compressor units. The target accelerating gradient is 40 MV/m or higher. Recently one prototype of C-band RF unit, consisting of a 1.8 m accelerating structure and a klystron with a TE0115 mode pulse compressor, has been tested with high-power and electron beam. Stable operation at 40 MV/m was demonstrated and, 50 MV/m approached by the end of the test. This paper introduces the C-band R&D program at SINAP and presents the experiment results of high-power and beam tests. (C) 2016 Elsevier B.V. All rights reserved.
Fang, WC,Gu, Q,Sheng, X,et al. Design, fabrication and first beam tests of the C-band RF acceleration unit at SINAP[J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT,2016-01-01,823(-):91—97.
