Development of broadband X-ray interference lithography large area exposure system
Xue, CF; Wu, YQ; Zhu, FY; Yang, SM; Liu, HG; Zhao, J; Wang, LS; Tai, RZ; Tai, RZ (reprint author), Chinese Acad Sci, Shanghai Synchrotron Radiat Facil, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China.
2016
发表期刊REVIEW OF SCIENTIFIC INSTRUMENTS
ISSN0034-6748
卷号87期号:4页码:
文章类型期刊文献
摘要The single-exposure patterned area is about several 10(2) x 10(2) mu m(2) which is mainly decided by the mask area in multi-beam X-ray interference lithography (XIL). The exposure area is difficult to stitch to a larger one because the patterned area is surrounded by 0th diffraction exposure areas. To block the 0th diffraction beams precisely and effectively, a new large area exposure technology is developed in the Shanghai Synchrotron Radiation Facility by applying an order-sorting aperture with a new in situ monitoring scheme in the XIL system. The patterned area could be stitched readily up to several square centimeters and even bigger by this technology. Published by AIP Publishing.
关键词Interferometric Lithography High-resolution Fabrication Arrays Grids Light
DOI10.1063/1.4947067
收录类别SCI
语种英语
WOS记录号WOS:000375842500023
引用统计
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/25683
专题中科院上海应用物理研究所2011-2018年
通讯作者Wu, YQ; Zhao, J; Tai, RZ (reprint author), Chinese Acad Sci, Shanghai Synchrotron Radiat Facil, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China.
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GB/T 7714
Xue, CF,Wu, YQ,Zhu, FY,et al. Development of broadband X-ray interference lithography large area exposure system[J]. REVIEW OF SCIENTIFIC INSTRUMENTS,2016,87(4):—.
APA Xue, CF.,Wu, YQ.,Zhu, FY.,Yang, SM.,Liu, HG.,...&Tai, RZ .(2016).Development of broadband X-ray interference lithography large area exposure system.REVIEW OF SCIENTIFIC INSTRUMENTS,87(4),—.
MLA Xue, CF,et al."Development of broadband X-ray interference lithography large area exposure system".REVIEW OF SCIENTIFIC INSTRUMENTS 87.4(2016):—.
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