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CAS OpenIR  > 中科院上海应用物理研究所2011-2017年  > 期刊论文
题名:
Development of broadband X-ray interference lithography large area exposure system
作者: Xue, CF; Wu, YQ; Zhu, FY; Yang, SM; Liu, HG; Zhao, J; Wang, LS; Tai, RZ
刊名: REVIEW OF SCIENTIFIC INSTRUMENTS
出版日期: 2016
卷号: 87, 期号:4, 页码:
关键词: INTERFEROMETRIC LITHOGRAPHY ; HIGH-RESOLUTION ; FABRICATION ; ARRAYS ; GRIDS ; LIGHT
DOI: 10.1063/1.4947067
通讯作者: Wu, YQ ; Zhao, J ; Tai, RZ (reprint author), Chinese Acad Sci, Shanghai Synchrotron Radiat Facil, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China.
文章类型: 期刊文献
英文摘要: The single-exposure patterned area is about several 10(2) x 10(2) mu m(2) which is mainly decided by the mask area in multi-beam X-ray interference lithography (XIL). The exposure area is difficult to stitch to a larger one because the patterned area is surrounded by 0th diffraction exposure areas. To block the 0th diffraction beams precisely and effectively, a new large area exposure technology is developed in the Shanghai Synchrotron Radiation Facility by applying an order-sorting aperture with a new in situ monitoring scheme in the XIL system. The patterned area could be stitched readily up to several square centimeters and even bigger by this technology. Published by AIP Publishing.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000375842500023
ISSN号: 0034-6748
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/25683
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Xue, CF,Wu, YQ,Zhu, FY,et al. Development of broadband X-ray interference lithography large area exposure system[J]. REVIEW OF SCIENTIFIC INSTRUMENTS,2016-01-01,87(4):—.
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