CAS OpenIR  > 中科院上海应用物理研究所2011-2018年
Effect of Water Adsorption on the Photoluminescence of Silicon Quantum Dots
Yang, JR; Fang, HP; Gao, Y; Gao, Y (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Div Interfacial Water, Shanghai 201800, Peoples R China.; Gao, Y (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China.; Gao, Y (reprint author), Chinese Acad Sci, Shanghai Sci Res Ctr, Shanghai 201204, Peoples R China.
2016
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY LETTERS
ISSN1948-7185
Volume7Issue:10Pages:1788—1793
Subtype期刊文献
AbstractThe optical properties of silicon quantum dots (Si QDs) are strongly influenced by circumjacent surface-adsorbed molecules, which would highly affect their applications; however, water, as the ubiquitous environment, has not received enough attention yet. We employed the time-dependent density functional calculations to investigate the water effect of photoluminescence (PL) spectra for Si QDs. In contrast with the absorption spectra, PL spectra exhibit distinct characteristics. For Si32H38, PL presents the single maximum in the dry and humid environment, while the emission spectrum displays a dual-band fluorescence spectroscopy in the low-humidity environment. This phenomenon is also observed in the larger Si QDs. The distinct character in spectroscopy is dominated by the stretching of the Si-Si bond, which could be explained by the self trapped exciton model. Our results shed light on the Si-water interaction that is important for the development of optical devices based on Si-coated surfaces.
KeywordPulsed-laser-ablation Electronic-properties Optical-properties Humidity Sensor Si Nanocrystals Clusters Nanoparticles Conductivity Luminescence Oxidation
DOI10.1021/acs.jpclett.6b00574
Indexed BySCI
Language英语
WOS IDWOS:000376421200006
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/25702
Collection中科院上海应用物理研究所2011-2018年
Corresponding AuthorGao, Y (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Div Interfacial Water, Shanghai 201800, Peoples R China.; Gao, Y (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol, Shanghai 201800, Peoples R China.; Gao, Y (reprint author), Chinese Acad Sci, Shanghai Sci Res Ctr, Shanghai 201204, Peoples R China.
Recommended Citation
GB/T 7714
Yang, JR,Fang, HP,Gao, Y,et al. Effect of Water Adsorption on the Photoluminescence of Silicon Quantum Dots[J]. JOURNAL OF PHYSICAL CHEMISTRY LETTERS,2016,7(10):1788—1793.
APA Yang, JR,Fang, HP,Gao, Y,Gao, Y ,Gao, Y ,&Gao, Y .(2016).Effect of Water Adsorption on the Photoluminescence of Silicon Quantum Dots.JOURNAL OF PHYSICAL CHEMISTRY LETTERS,7(10),1788—1793.
MLA Yang, JR,et al."Effect of Water Adsorption on the Photoluminescence of Silicon Quantum Dots".JOURNAL OF PHYSICAL CHEMISTRY LETTERS 7.10(2016):1788—1793.
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