Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod
Wang, H; Zhang, W; Wang, CB; Ma, JW; Huai, P; Huai, P (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China.
2016
发表期刊MATERIALS RESEARCH EXPRESS
ISSN2053-1591
卷号3期号:3页码:
文章类型期刊文献
摘要The thermal transport behaviors of < 011 > Sigma 3, Sigma 9 and Sigma 11 grain boundaries (GBs) in silicon carbide nanorod are investigated by using nonequilibrium molecular dynamics (NEMD) simulation. Temperature changes suddenly at the boundaries if a constant heat flux is assumed. The thermal conductance of these GBs is found several times larger than that of interfaces of other materials previously reported. Furthermore the interfacial thermal resistance increases with elevated temperature above 500 K. Our results give theoretical guidance to understand the underlying thermal transport mechanism in silicon carbide, and may be helpful to design silicon carbide materials for high temperature applications.
关键词Polycrystalline Graphene Fuel-particles Nanowires Conductivity Resistance Ebsd
DOI10.1088/2053-1591/3/3/035018
收录类别SCI
语种英语
WOS记录号WOS:000377811100019
引用统计
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/25775
专题中科院上海应用物理研究所2011-2018年
通讯作者Huai, P (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China.
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Wang, H,Zhang, W,Wang, CB,et al. Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod[J]. MATERIALS RESEARCH EXPRESS,2016,3(3):—.
APA Wang, H,Zhang, W,Wang, CB,Ma, JW,Huai, P,&Huai, P .(2016).Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod.MATERIALS RESEARCH EXPRESS,3(3),—.
MLA Wang, H,et al."Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod".MATERIALS RESEARCH EXPRESS 3.3(2016):—.
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