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Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod
Wang, H; Zhang, W; Wang, CB; Ma, JW; Huai, P; Huai, P (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China.
2016
Source PublicationMATERIALS RESEARCH EXPRESS
ISSN2053-1591
Volume3Issue:3Pages:
Subtype期刊文献
AbstractThe thermal transport behaviors of < 011 > Sigma 3, Sigma 9 and Sigma 11 grain boundaries (GBs) in silicon carbide nanorod are investigated by using nonequilibrium molecular dynamics (NEMD) simulation. Temperature changes suddenly at the boundaries if a constant heat flux is assumed. The thermal conductance of these GBs is found several times larger than that of interfaces of other materials previously reported. Furthermore the interfacial thermal resistance increases with elevated temperature above 500 K. Our results give theoretical guidance to understand the underlying thermal transport mechanism in silicon carbide, and may be helpful to design silicon carbide materials for high temperature applications.
KeywordPolycrystalline Graphene Fuel-particles Nanowires Conductivity Resistance Ebsd
DOI10.1088/2053-1591/3/3/035018
Indexed BySCI
Language英语
WOS IDWOS:000377811100019
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Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/25775
Collection中科院上海应用物理研究所2011-2018年
Corresponding AuthorHuai, P (reprint author), Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai 201800, Peoples R China.
Recommended Citation
GB/T 7714
Wang, H,Zhang, W,Wang, CB,et al. Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod[J]. MATERIALS RESEARCH EXPRESS,2016,3(3):—.
APA Wang, H,Zhang, W,Wang, CB,Ma, JW,Huai, P,&Huai, P .(2016).Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod.MATERIALS RESEARCH EXPRESS,3(3),—.
MLA Wang, H,et al."Molecular dynamics study of thermal transport across grain boundaries in silicon carbide nanorod".MATERIALS RESEARCH EXPRESS 3.3(2016):—.
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