Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition
Yang, MM; Yang, YJ; Hong, B; Wang, LX; Hu, K; Dong, YQ; Xu, H; Huang, HL; Zhao, JT; Chen, HP; Song, L; Ju, HX; Zhu, JF; Bao, J; Li, XG; Gu, YL; Yang, TY; Gao, XY; Luo, ZL; Gao, C; Gao, C (reprint author), Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China.; Gao, C (reprint author), Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China.; Gao, C (reprint author), Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China.
2016
发表期刊SCIENTIFIC REPORTS
ISSN2045-2322
卷号6期号:-页码:
文章类型期刊文献
摘要Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy E-F of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films.
关键词Dioxide Thin-films Vanadium Dioxide Mott Transition Tio2 001 Spectroscopy Modulation Temperature Devices
DOI10.1038/srep23119
收录类别SCI
语种英语
WOS记录号WOS:000372053600001
引用统计
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/25853
专题中科院上海应用物理研究所2011-2018年
通讯作者Yang, YJ; Luo, ZL; Gao, C (reprint author), Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China.; Gao, C (reprint author), Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China.; Gao, C (reprint author), Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China.
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GB/T 7714
Yang, MM,Yang, YJ,Hong, B,et al. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition[J]. SCIENTIFIC REPORTS,2016,6(-):—.
APA Yang, MM.,Yang, YJ.,Hong, B.,Wang, LX.,Hu, K.,...&Gao, C .(2016).Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition.SCIENTIFIC REPORTS,6(-),—.
MLA Yang, MM,et al."Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition".SCIENTIFIC REPORTS 6.-(2016):—.
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