Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition

doi:10.1038/srep23119

CAS OpenIR > 中科院上海应用物理研究所2011-2018年

	Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition
	Yang, MM; Yang, YJ; Hong, B; Wang, LX; Hu, K; Dong, YQ; Xu, H; Huang, HL; Zhao, JT; Chen, HP; Song, L; Ju, HX; Zhu, JF; Bao, J; Li, XG; Gu, YL; Yang, TY; Gao, XY; Luo, ZL; Gao, C; Gao, C (reprint author), Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China.; Gao, C (reprint author), Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China.; Gao, C (reprint author), Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China.
	2016
发表期刊	SCIENTIFIC REPORTS
ISSN	2045-2322
卷号	6 期号:-页码:—
文章类型	期刊文献
摘要	Mechanism of metal-insulator transition (MIT) in strained VO2 thin films is very complicated and incompletely understood despite three scenarios with potential explanations including electronic correlation (Mott mechanism), structural transformation (Peierls theory) and collaborative Mott-Peierls transition. Herein, we have decoupled coactions of structural and electronic phase transitions across the MIT by implementing epitaxial strain on 13-nm-thick (001)-VO2 films in comparison to thicker films. The structural evolution during MIT characterized by temperature-dependent synchrotron radiation high-resolution X-ray diffraction reciprocal space mapping and Raman spectroscopy suggested that the structural phase transition in the temperature range of vicinity of the MIT is suppressed by epitaxial strain. Furthermore, temperature-dependent Ultraviolet Photoelectron Spectroscopy (UPS) revealed the changes in electron occupancy near the Fermi energy E-F of V 3d orbital, implying that the electronic transition triggers the MIT in the strained films. Thus the MIT in the bi-axially strained VO2 thin films should be only driven by electronic transition without assistance of structural phase transition. Density functional theoretical calculations further confirmed that the tetragonal phase across the MIT can be both in insulating and metallic states in the strained (001)-VO2/TiO2 thin films. This work offers a better understanding of the mechanism of MIT in the strained VO2 films.
关键词	Dioxide Thin-films Vanadium Dioxide Mott Transition Tio2 001 Spectroscopy Modulation Temperature Devices
DOI	10.1038/srep23119
收录类别	SCI
语种	英语
WOS记录号	WOS:000372053600001
引用统计
文献类型	期刊论文
条目标识符	http://ir.sinap.ac.cn/handle/331007/25853
专题	中科院上海应用物理研究所2011-2018年
通讯作者	Yang, YJ; Luo, ZL; Gao, C (reprint author), Univ Sci & Technol China, Natl Synchrotron Radiat Lab, Hefei 230026, Anhui, Peoples R China.; Gao, C (reprint author), Univ Sci & Technol China, Collaborat Innovat Ctr Chem Energy Mat, Hefei 230026, Anhui, Peoples R China.; Gao, C (reprint author), Univ Sci & Technol China, Dept Mat Sci & Engn, CAS Key Lab Mat Energy Convers, Hefei 230026, Anhui, Peoples R China.
推荐引用方式 GB/T 7714	Yang, MM,Yang, YJ,Hong, B,et al. Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition[J]. SCIENTIFIC REPORTS,2016,6(-):—.
APA	Yang, MM.,Yang, YJ.,Hong, B.,Wang, LX.,Hu, K.,...&Gao, C .(2016).Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition.SCIENTIFIC REPORTS,6(-),—.
MLA	Yang, MM,et al."Suppression of Structural Phase Transition in VO2 by Epitaxial Strain in Vicinity of Metal-insulator Transition".SCIENTIFIC REPORTS 6.-(2016):—.

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