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题名:
The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties
作者: Guo, HZ; Wang, JO; He, X; Yang, ZZ; Zhang, QH; Jin, KJ; Ge, C; Zhao, RQ; Gu, L; Feng, YQ; Zhou, WJ; Li, XL; Wan, Q; He, M; Hong, CH; Guo, ZY; Wang, C; Lu, HB; Ibrahim, K; Meng, S; Yang, H; Yang, GZ
刊名: ADVANCED MATERIALS INTERFACES
出版日期: 2016
卷号: 3, 期号:5, 页码:
关键词: RAY-ABSORPTION-SPECTROSCOPY ; MIXED-VALENCE MANGANITES ; THIN-FILMS ; MANGANESE PEROVSKITES ; INTERFACIAL-STRAIN ; METAL TRANSITION ; DOPED MANGANITES ; LA1-XSRXMNO3 ; OXIDES ; MAGNETORESISTANCE
DOI: 10.1002/admi.201500753
通讯作者: Jin, KJ ; Gu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. ; Jin, KJ ; Gu, L (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
文章类型: 期刊文献
英文摘要: Mixed-valence manganites gain increasing attentions thanks to their extraordinary properties including half-metallicity and colossal magnetoresistive response, rendering them ideal candidate for oxide spintronics applications. Oxygen vacancies in oxides have been approved to be important functional defects and are effective to manipulating their multifunctional properties. To gain a deep insight into the roles of oxygen vacancies on regulating the atomic structure and electronic properties of the mixed-valence manganites, two high-quality epitaxial La2/3Sr1/3MnO3 films around a critical point (without/with oxygen vacancies) were designed and fabricated. From the experiments and theoretical calculations, it was found that the oxygen vacancies induce a weakening of Mn-O-Mn hybridized bond and an increase of concentration of Mn3+ ions, impair the double exchange between Mn3+ and Mn4+, and therefore lead to the transition from metal to insulator and the degraded magnetic properties. Our finding demonstrates a practical approach to tune the magnetic and transport properties of oxide thin films by precisely controlling the oxygen vacancies for high performance spintronics applications.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000372005900010
ISSN号: 2196-7350
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/25870
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Guo, HZ,Wang, JO,He, X,et al. The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties[J]. ADVANCED MATERIALS INTERFACES,2016-01-01,3(5):—.
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