CAS OpenIR  > 中科院上海应用物理研究所2011-2018年
The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties
Guo, HZ; Wang, JO; He, X; Yang, ZZ; Zhang, QH; Jin, KJ; Ge, C; Zhao, RQ; Gu, L; Feng, YQ; Zhou, WJ; Li, XL; Wan, Q; He, M; Hong, CH; Guo, ZY; Wang, C; Lu, HB; Ibrahim, K; Meng, S; Yang, H; Yang, GZ; Gu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.; Gu, L (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
2016
Source PublicationADVANCED MATERIALS INTERFACES
ISSN2196-7350
Volume3Issue:5Pages:
Subtype期刊文献
AbstractMixed-valence manganites gain increasing attentions thanks to their extraordinary properties including half-metallicity and colossal magnetoresistive response, rendering them ideal candidate for oxide spintronics applications. Oxygen vacancies in oxides have been approved to be important functional defects and are effective to manipulating their multifunctional properties. To gain a deep insight into the roles of oxygen vacancies on regulating the atomic structure and electronic properties of the mixed-valence manganites, two high-quality epitaxial La2/3Sr1/3MnO3 films around a critical point (without/with oxygen vacancies) were designed and fabricated. From the experiments and theoretical calculations, it was found that the oxygen vacancies induce a weakening of Mn-O-Mn hybridized bond and an increase of concentration of Mn3+ ions, impair the double exchange between Mn3+ and Mn4+, and therefore lead to the transition from metal to insulator and the degraded magnetic properties. Our finding demonstrates a practical approach to tune the magnetic and transport properties of oxide thin films by precisely controlling the oxygen vacancies for high performance spintronics applications.
KeywordRay-absorption-spectroscopy Mixed-valence Manganites Thin-films Manganese Perovskites Interfacial-strain Metal Transition Doped Manganites La1-xsrxmno3 Oxides Magnetoresistance
DOI10.1002/admi.201500753
Indexed BySCI
Language英语
WOS IDWOS:000372005900010
Citation statistics
Cited Times:21[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/25870
Collection中科院上海应用物理研究所2011-2018年
Corresponding AuthorJin, KJ; Gu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.; Gu, L (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
Recommended Citation
GB/T 7714
Guo, HZ,Wang, JO,He, X,et al. The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties[J]. ADVANCED MATERIALS INTERFACES,2016,3(5):—.
APA Guo, HZ.,Wang, JO.,He, X.,Yang, ZZ.,Zhang, QH.,...&Gu, L .(2016).The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties.ADVANCED MATERIALS INTERFACES,3(5),—.
MLA Guo, HZ,et al."The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties".ADVANCED MATERIALS INTERFACES 3.5(2016):—.
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