The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties
Guo, HZ; Wang, JO; He, X; Yang, ZZ; Zhang, QH; Jin, KJ; Ge, C; Zhao, RQ; Gu, L; Feng, YQ; Zhou, WJ; Li, XL; Wan, Q; He, M; Hong, CH; Guo, ZY; Wang, C; Lu, HB; Ibrahim, K; Meng, S; Yang, H; Yang, GZ; Gu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.; Gu, L (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
2016
发表期刊ADVANCED MATERIALS INTERFACES
ISSN2196-7350
卷号3期号:5页码:
文章类型期刊文献
摘要Mixed-valence manganites gain increasing attentions thanks to their extraordinary properties including half-metallicity and colossal magnetoresistive response, rendering them ideal candidate for oxide spintronics applications. Oxygen vacancies in oxides have been approved to be important functional defects and are effective to manipulating their multifunctional properties. To gain a deep insight into the roles of oxygen vacancies on regulating the atomic structure and electronic properties of the mixed-valence manganites, two high-quality epitaxial La2/3Sr1/3MnO3 films around a critical point (without/with oxygen vacancies) were designed and fabricated. From the experiments and theoretical calculations, it was found that the oxygen vacancies induce a weakening of Mn-O-Mn hybridized bond and an increase of concentration of Mn3+ ions, impair the double exchange between Mn3+ and Mn4+, and therefore lead to the transition from metal to insulator and the degraded magnetic properties. Our finding demonstrates a practical approach to tune the magnetic and transport properties of oxide thin films by precisely controlling the oxygen vacancies for high performance spintronics applications.
关键词Ray-absorption-spectroscopy Mixed-valence Manganites Thin-films Manganese Perovskites Interfacial-strain Metal Transition Doped Manganites La1-xsrxmno3 Oxides Magnetoresistance
DOI10.1002/admi.201500753
收录类别SCI
语种英语
WOS记录号WOS:000372005900010
引用统计
被引频次:14[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/25870
专题中科院上海应用物理研究所2011-2018年
通讯作者Jin, KJ; Gu, L (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.; Gu, L (reprint author), Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China.
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Guo, HZ,Wang, JO,He, X,et al. The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties[J]. ADVANCED MATERIALS INTERFACES,2016,3(5):—.
APA Guo, HZ.,Wang, JO.,He, X.,Yang, ZZ.,Zhang, QH.,...&Gu, L .(2016).The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties.ADVANCED MATERIALS INTERFACES,3(5),—.
MLA Guo, HZ,et al."The Origin of Oxygen Vacancies Controlling La2/3Sr1/3MnO3 Electronic and Magnetic Properties".ADVANCED MATERIALS INTERFACES 3.5(2016):—.
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