Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers
Zhou, Y; Zhou, DD; Liu, BM; Li, LN; Yong, ZJ; Xing, H; Fang, YZ; Hou, JS; Sun, HT; Sun, HT (reprint author), Soochow Univ, State & Local Joint Engn Lab Novel Funct Polymer, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China.
2016
发表期刊JOURNAL OF MATERIALS CHEMISTRY C
ISSN2050-7526
卷号4期号:12页码:2295—2301
文章类型期刊文献
摘要Bismuth doped materials with near infrared (NIR) photoluminescence (PL) have recently attracted tremendous attention because of their great potential for photonic and optoelectronic devices that could find broad applications in modern optical telecommunications. However, the mechanistic studies of the NIR PL from these materials still significantly lag behind, which imposes substantial limitations in rationally discovering and designing new materials. In this contribution, we investigated the optical and structural properties of Bi doped CsPbI3 using a diverse range of experimental techniques. We proved that the observed ultrabroad NIR PL with lifetimes of tens of microseconds is not connected with a single-ion Bi active center. For the first time, we proposed a polaron model to rationally explain the observed PL from Bi doped CsPbI3. Finally, we demonstrate the first observation of NIR PL from nanowires among the Bi doped luminescent materials. The experimental results reported here not only deepen the understanding of NIR PL mechanisms in Bi doped materials, but also introduce a new family of solution-processed nanostructures operating in the NIR, which may stimulate further research in exploiting this technique to design a broad range of photonic and optoelectronic devices.
关键词Thin-films Nir Photoluminescence Silica Glass Luminescence Cs4pbi6 Bi Absorption Impurity Phase Pb
DOI10.1039/c5tc04333f
收录类别SCI
语种英语
WOS记录号WOS:000372643300006
引用统计
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/25879
专题中科院上海应用物理研究所2011-2018年
通讯作者Sun, HT (reprint author), Soochow Univ, State & Local Joint Engn Lab Novel Funct Polymer, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China.
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Zhou, Y,Zhou, DD,Liu, BM,et al. Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers[J]. JOURNAL OF MATERIALS CHEMISTRY C,2016,4(12):2295—2301.
APA Zhou, Y.,Zhou, DD.,Liu, BM.,Li, LN.,Yong, ZJ.,...&Sun, HT .(2016).Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers.JOURNAL OF MATERIALS CHEMISTRY C,4(12),2295—2301.
MLA Zhou, Y,et al."Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers".JOURNAL OF MATERIALS CHEMISTRY C 4.12(2016):2295—2301.
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