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CAS OpenIR  > 中科院上海应用物理研究所2011-2017年  > 期刊论文
题名:
Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers
作者: Zhou, Y; Zhou, DD; Liu, BM; Li, LN; Yong, ZJ; Xing, H; Fang, YZ; Hou, JS; Sun, HT
刊名: JOURNAL OF MATERIALS CHEMISTRY C
出版日期: 2016
卷号: 4, 期号:12, 页码:2295—2301
关键词: THIN-FILMS ; NIR PHOTOLUMINESCENCE ; SILICA GLASS ; LUMINESCENCE ; CS4PBI6 ; BI ; ABSORPTION ; IMPURITY ; PHASE ; PB
DOI: 10.1039/c5tc04333f
通讯作者: Sun, HT (reprint author), Soochow Univ, State & Local Joint Engn Lab Novel Funct Polymer, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China.
文章类型: 期刊文献
英文摘要: Bismuth doped materials with near infrared (NIR) photoluminescence (PL) have recently attracted tremendous attention because of their great potential for photonic and optoelectronic devices that could find broad applications in modern optical telecommunications. However, the mechanistic studies of the NIR PL from these materials still significantly lag behind, which imposes substantial limitations in rationally discovering and designing new materials. In this contribution, we investigated the optical and structural properties of Bi doped CsPbI3 using a diverse range of experimental techniques. We proved that the observed ultrabroad NIR PL with lifetimes of tens of microseconds is not connected with a single-ion Bi active center. For the first time, we proposed a polaron model to rationally explain the observed PL from Bi doped CsPbI3. Finally, we demonstrate the first observation of NIR PL from nanowires among the Bi doped luminescent materials. The experimental results reported here not only deepen the understanding of NIR PL mechanisms in Bi doped materials, but also introduce a new family of solution-processed nanostructures operating in the NIR, which may stimulate further research in exploiting this technique to design a broad range of photonic and optoelectronic devices.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000372643300006
ISSN号: 2050-7526
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/25879
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Zhou, Y,Zhou, DD,Liu, BM,et al. Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers[J]. JOURNAL OF MATERIALS CHEMISTRY C,2016-01-01,4(12):2295—2301.
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