Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers

doi:10.1039/c5tc04333f

CAS OpenIR > 中科院上海应用物理研究所2011-2018年

	Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers
	Zhou, Y; Zhou, DD; Liu, BM; Li, LN; Yong, ZJ; Xing, H; Fang, YZ; Hou, JS; Sun, HT; Sun, HT (reprint author), Soochow Univ, State & Local Joint Engn Lab Novel Funct Polymer, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China.
	2016
发表期刊	JOURNAL OF MATERIALS CHEMISTRY C
ISSN	2050-7526
卷号	4 期号:12 页码:2295—2301
文章类型	期刊文献
摘要	Bismuth doped materials with near infrared (NIR) photoluminescence (PL) have recently attracted tremendous attention because of their great potential for photonic and optoelectronic devices that could find broad applications in modern optical telecommunications. However, the mechanistic studies of the NIR PL from these materials still significantly lag behind, which imposes substantial limitations in rationally discovering and designing new materials. In this contribution, we investigated the optical and structural properties of Bi doped CsPbI3 using a diverse range of experimental techniques. We proved that the observed ultrabroad NIR PL with lifetimes of tens of microseconds is not connected with a single-ion Bi active center. For the first time, we proposed a polaron model to rationally explain the observed PL from Bi doped CsPbI3. Finally, we demonstrate the first observation of NIR PL from nanowires among the Bi doped luminescent materials. The experimental results reported here not only deepen the understanding of NIR PL mechanisms in Bi doped materials, but also introduce a new family of solution-processed nanostructures operating in the NIR, which may stimulate further research in exploiting this technique to design a broad range of photonic and optoelectronic devices.
关键词	Thin-films Nir Photoluminescence Silica Glass Luminescence Cs4pbi6 Bi Absorption Impurity Phase Pb
DOI	10.1039/c5tc04333f
收录类别	SCI
语种	英语
WOS记录号	WOS:000372643300006
引用统计	被引频次：9[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.sinap.ac.cn/handle/331007/25879
专题	中科院上海应用物理研究所2011-2018年
通讯作者	Sun, HT (reprint author), Soochow Univ, State & Local Joint Engn Lab Novel Funct Polymer, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China.
推荐引用方式 GB/T 7714	Zhou, Y,Zhou, DD,Liu, BM,et al. Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers[J]. JOURNAL OF MATERIALS CHEMISTRY C,2016,4(12):2295—2301.
APA	Zhou, Y.,Zhou, DD.,Liu, BM.,Li, LN.,Yong, ZJ.,...&Sun, HT .(2016).Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers.JOURNAL OF MATERIALS CHEMISTRY C,4(12),2295—2301.
MLA	Zhou, Y,et al."Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers".JOURNAL OF MATERIALS CHEMISTRY C 4.12(2016):2295—2301.

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