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Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers
Zhou, Y; Zhou, DD; Liu, BM; Li, LN; Yong, ZJ; Xing, H; Fang, YZ; Hou, JS; Sun, HT; Sun, HT (reprint author), Soochow Univ, State & Local Joint Engn Lab Novel Funct Polymer, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China.
2016
Source PublicationJOURNAL OF MATERIALS CHEMISTRY C
ISSN2050-7526
Volume4Issue:12Pages:2295—2301
Subtype期刊文献
AbstractBismuth doped materials with near infrared (NIR) photoluminescence (PL) have recently attracted tremendous attention because of their great potential for photonic and optoelectronic devices that could find broad applications in modern optical telecommunications. However, the mechanistic studies of the NIR PL from these materials still significantly lag behind, which imposes substantial limitations in rationally discovering and designing new materials. In this contribution, we investigated the optical and structural properties of Bi doped CsPbI3 using a diverse range of experimental techniques. We proved that the observed ultrabroad NIR PL with lifetimes of tens of microseconds is not connected with a single-ion Bi active center. For the first time, we proposed a polaron model to rationally explain the observed PL from Bi doped CsPbI3. Finally, we demonstrate the first observation of NIR PL from nanowires among the Bi doped luminescent materials. The experimental results reported here not only deepen the understanding of NIR PL mechanisms in Bi doped materials, but also introduce a new family of solution-processed nanostructures operating in the NIR, which may stimulate further research in exploiting this technique to design a broad range of photonic and optoelectronic devices.
KeywordThin-films Nir Photoluminescence Silica Glass Luminescence Cs4pbi6 Bi Absorption Impurity Phase Pb
DOI10.1039/c5tc04333f
Indexed BySCI
Language英语
WOS IDWOS:000372643300006
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/25879
Collection中科院上海应用物理研究所2011-2018年
Corresponding AuthorSun, HT (reprint author), Soochow Univ, State & Local Joint Engn Lab Novel Funct Polymer, Coll Chem Chem Engn & Mat Sci, Suzhou 215123, Peoples R China.
Recommended Citation
GB/T 7714
Zhou, Y,Zhou, DD,Liu, BM,et al. Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers[J]. JOURNAL OF MATERIALS CHEMISTRY C,2016,4(12):2295—2301.
APA Zhou, Y.,Zhou, DD.,Liu, BM.,Li, LN.,Yong, ZJ.,...&Sun, HT .(2016).Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers.JOURNAL OF MATERIALS CHEMISTRY C,4(12),2295—2301.
MLA Zhou, Y,et al."Ultrabroad near-infrared photoluminescence from bismuth doped CsPbI3: polaronic defects vs. bismuth active centers".JOURNAL OF MATERIALS CHEMISTRY C 4.12(2016):2295—2301.
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