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Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells
Yuan, ZC; Yang, YG; Wu, ZW; Bai, S; Xu, WD; Song, T; Gao, XY; Gao, F; Sun, BQ; Sun, BQ (reprint author), Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China.; Gao, F (reprint author), Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden.; Gao, XY (reprint author), Chinese Acad Sci, SSRF, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol,Shanghai Inst, Shanghai 201800, Peoples R China.
2016
Source PublicationACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
Volume8Issue:50Pages:34446-34454
Subtype期刊论文
AbstractDevice performance of organometal halide perovskite solar cells significantly depends on the quality and thickness of perovskite absorber films. However, conventional deposition methods often generate pinholes within similar to 300 nm-thick perovskite films, which are detrimental to the large area device manufacture. Here we demonstrated a simple solvent retarding process to deposit uniform pinhole free perovskite films with thicknesses up to similar to 800 nm. Solvent evaporation during the retarding process facilitated the components separation in the mixed halide perovskite precursors, and hence the final films exhibited pinhole free morphology and large grain sizes. In addition, the increased precursor concentration after solvent-retarding process led to thick perovskite films. Based on the uniform and thick perovskite films prepared by this convenient process, a champion device efficiency up to 16.8% was achieved. We believe that this simple deposition procedure for high quality perovskite films around micrometer thickness has a great potential in the application of large area perovskite solar cells and other optoelectronic devices.
KeywordPerovskite Solar Cells Solvent Retarding Crystallization Components Separation Film Thickness
DOI10.1021/acsami.6b12637
Indexed BySCI
Language英语
WOS IDWOS:000390728900033
Citation statistics
Cited Times:18[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/26431
Collection中科院上海应用物理研究所2011-2018年
Corresponding AuthorSun, BQ (reprint author), Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China.; Gao, F (reprint author), Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden.; Gao, XY (reprint author), Chinese Acad Sci, SSRF, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol,Shanghai Inst, Shanghai 201800, Peoples R China.
Recommended Citation
GB/T 7714
Yuan, ZC,Yang, YG,Wu, ZW,et al. Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(50):34446-34454.
APA Yuan, ZC.,Yang, YG.,Wu, ZW.,Bai, S.,Xu, WD.,...&Gao, XY .(2016).Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells.ACS APPLIED MATERIALS & INTERFACES,8(50),34446-34454.
MLA Yuan, ZC,et al."Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells".ACS APPLIED MATERIALS & INTERFACES 8.50(2016):34446-34454.
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