Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells
Yuan, ZC; Yang, YG; Wu, ZW; Bai, S; Xu, WD; Song, T; Gao, XY; Gao, F; Sun, BQ; Sun, BQ (reprint author), Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China.; Gao, F (reprint author), Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden.; Gao, XY (reprint author), Chinese Acad Sci, SSRF, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol,Shanghai Inst, Shanghai 201800, Peoples R China.
2016
发表期刊ACS APPLIED MATERIALS & INTERFACES
ISSN1944-8244
卷号8期号:50页码:34446-34454
文章类型期刊论文
摘要Device performance of organometal halide perovskite solar cells significantly depends on the quality and thickness of perovskite absorber films. However, conventional deposition methods often generate pinholes within similar to 300 nm-thick perovskite films, which are detrimental to the large area device manufacture. Here we demonstrated a simple solvent retarding process to deposit uniform pinhole free perovskite films with thicknesses up to similar to 800 nm. Solvent evaporation during the retarding process facilitated the components separation in the mixed halide perovskite precursors, and hence the final films exhibited pinhole free morphology and large grain sizes. In addition, the increased precursor concentration after solvent-retarding process led to thick perovskite films. Based on the uniform and thick perovskite films prepared by this convenient process, a champion device efficiency up to 16.8% was achieved. We believe that this simple deposition procedure for high quality perovskite films around micrometer thickness has a great potential in the application of large area perovskite solar cells and other optoelectronic devices.
关键词Perovskite Solar Cells Solvent Retarding Crystallization Components Separation Film Thickness
DOI10.1021/acsami.6b12637
收录类别SCI
语种英语
WOS记录号WOS:000390728900033
引用统计
被引频次:12[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/26431
专题中科院上海应用物理研究所2011-2018年
通讯作者Sun, BQ (reprint author), Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Peoples R China.; Gao, F (reprint author), Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden.; Gao, XY (reprint author), Chinese Acad Sci, SSRF, Shanghai Inst Appl Phys, Key Lab Interfacial Phys & Technol,Shanghai Inst, Shanghai 201800, Peoples R China.
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Yuan, ZC,Yang, YG,Wu, ZW,et al. Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells[J]. ACS APPLIED MATERIALS & INTERFACES,2016,8(50):34446-34454.
APA Yuan, ZC.,Yang, YG.,Wu, ZW.,Bai, S.,Xu, WD.,...&Gao, XY .(2016).Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells.ACS APPLIED MATERIALS & INTERFACES,8(50),34446-34454.
MLA Yuan, ZC,et al."Approximately 800-nm-Thick Pinhole-Free Perovskite Films via Facile Solvent Retarding Process for Efficient Planar Solar Cells".ACS APPLIED MATERIALS & INTERFACES 8.50(2016):34446-34454.
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