Effect of Ar+ ion post-irradiation on crystal structure, magnetic behavior and optical band gap of Co-implanted ZnO wafers
Xu, NN; Li, GP; Lin, QL; Liu, H; Bao, LM; Li, GP (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China.
2016
发表期刊SOLID STATE COMMUNICATIONS
ISSN0038-1098
卷号248页码:65-67
文章类型期刊论文
摘要Single crystals wurtzite ZnO with (001) orientation were implanted with Co+ ions at room temperature (RT). To tune their magnetic behavior as well as the band gap of the implanted wafers, Ar+ ion post-irradiation (PI) was performed using the calculated energy and ion dose. The formed Co clusters present in the high dose Co-implanted ZnO wafer were observed to be absent after the PI, which is quite different from the low dose doped one. It is found that all the implanted samples showed a giant magnetic moment and a narrowing optical band gap, and that the post-irradiated ones exhibited an even further redshifted absorption edge and ferromagnetic behavior but with saturation magnetization (M-S) drastically decreased.
关键词Zno Co Implantation Ar Post-irradiation M-s Band Gap
DOI10.1016/j.ssc.2016.09.008
收录类别SCI
语种英语
WOS记录号WOS:000385005700011
引用统计
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/26485
专题中科院上海应用物理研究所2011-2018年
通讯作者Li, GP (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China.
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Xu, NN,Li, GP,Lin, QL,et al. Effect of Ar+ ion post-irradiation on crystal structure, magnetic behavior and optical band gap of Co-implanted ZnO wafers[J]. SOLID STATE COMMUNICATIONS,2016,248:65-67.
APA Xu, NN,Li, GP,Lin, QL,Liu, H,Bao, LM,&Li, GP .(2016).Effect of Ar+ ion post-irradiation on crystal structure, magnetic behavior and optical band gap of Co-implanted ZnO wafers.SOLID STATE COMMUNICATIONS,248,65-67.
MLA Xu, NN,et al."Effect of Ar+ ion post-irradiation on crystal structure, magnetic behavior and optical band gap of Co-implanted ZnO wafers".SOLID STATE COMMUNICATIONS 248(2016):65-67.
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