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题名: Effect of Ar+ ion post-irradiation on crystal structure, magnetic behavior and optical band gap of Co-implanted ZnO wafers
作者: Xu, NN; Li, GP; Lin, QL; Liu, H; Bao, LM
刊名: SOLID STATE COMMUNICATIONS
出版日期: 2016
卷号: 248, 页码:65-67
关键词: ZnO ; Co implantation ; Ar post-irradiation ; M-S ; Band gap
DOI: 10.1016/j.ssc.2016.09.008
通讯作者: Li, GP (reprint author), Lanzhou Univ, Sch Nucl Sci & Technol, Lanzhou 730000, Peoples R China.
文章类型: 期刊论文
英文摘要: Single crystals wurtzite ZnO with (001) orientation were implanted with Co+ ions at room temperature (RT). To tune their magnetic behavior as well as the band gap of the implanted wafers, Ar+ ion post-irradiation (PI) was performed using the calculated energy and ion dose. The formed Co clusters present in the high dose Co-implanted ZnO wafer were observed to be absent after the PI, which is quite different from the low dose doped one. It is found that all the implanted samples showed a giant magnetic moment and a narrowing optical band gap, and that the post-irradiated ones exhibited an even further redshifted absorption edge and ferromagnetic behavior but with saturation magnetization (M-S) drastically decreased.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000385005700011
ISSN号: 0038-1098
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/26485
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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