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题名: Evolution and Engineering of Precisely Controlled Ge Nanostructures on Scalable Array of Ordered Si Nano-pillars
作者: Wang, SG; Zhou, T; Li, DH; Zhong, ZY
刊名: SCIENTIFIC REPORTS
出版日期: 2016
卷号: 6, 页码:-
DOI: 10.1038/srep28872
通讯作者: Zhong, ZY (reprint author), Fudan Univ, Collaborat Innovat Ctr Adv Microstruct, State Key Lab Surface Phys, Shanghai 200433, Peoples R China. ; Zhong, ZY (reprint author), Fudan Univ, Collaborat Innovat Ctr Adv Microstruct, Dept Phys, Shanghai 200433, Peoples R China.
文章类型: 期刊论文
英文摘要: The scalable array of ordered nano-pillars with precisely controllable quantum nanostructures (QNs) are ideal candidates for the exploration of the fundamental features of cavity quantum electrodynamics. It also has a great potential in the applications of innovative nano-optoelectronic devices for the future quantum communication and integrated photon circuits. Here, we present a synthesis of such hybrid system in combination of the nanosphere lithography and the self-assembly during heteroepitaxy. The precise positioning and controllable evolution of self-assembled Ge QNs, including quantum dot necklace(QDN), QD molecule(QDM) and quantum ring(QR), on Si nano-pillars are readily achieved. Considering the strain relaxation and the non-uniform Ge growth due to the thickness-dependent and anisotropic surface diffusion of adatoms on the pillars, the comprehensive scenario of the Ge growth on Si pillars is discovered. It clarifies the inherent mechanism underlying the controllable growth of the QNs on the pillar. Moreover, it inspires a deliberate two-step growth procedure to engineer the controllable QNs on the pillar. Our results pave a promising avenue to the achievement of desired nano-pillar-QNs system that facilitates the strong light-matter interaction due to both spectra and spatial coupling between the QNs and the cavity modes of a single pillar and the periodic pillars.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000378808000001
ISSN号: 2045-2322
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/26499
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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