CAS OpenIR  > 中科院上海应用物理研究所2011-2018年
Fabrication and Characterization of High Stability (EDA)(FA)(2)[Pb3I10] Layered Perovskite Film
Gao, YM; Jiang, WL; Yang, TY; Zuo, YZ; Gao, YM (reprint author), Jiangsu Univ Sci & Technol, Coll Mat Sci & Engn, Zhenjiang 212003, Peoples R China.
2016
Source PublicationJOURNAL OF INORGANIC MATERIALS
ISSN1000-324X
Volume31Issue:10Pages:1129-1134
Subtype期刊论文
AbstractA new two-dimensional layered hybrid perovskite solar-cell absorber was synthesized by one-step method, using (EDA)I-2, (FA)I, and PbI2 with a 1 : 2 : 3 stoichiometric ratio in a solvent mixture of N, N-dimethylformamide(DMF). Ethylenediamine(EDA) cation was introduced into the perovskite lattice to synthesize a layered structure with improved resistance to the degradation by humidity in air. The effects of humidity and time on crystal structure, composition, morphology, and absorption spectra of (EDA)(FA)(2)[Pb3I10] and CH3NH3PbI3 were analyzed by in situ grazing incidence X-ray diffraction(GIXRD), X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope(AFM), and UV-Vis spectroscope. The results reveal that the prepared (EDA)(FA)(2)[Pb3I10] film is more moisture resistant than the CH3NH3PbI3 film which is widely used in the perovskite solar cell. SEM analysis reveals that the (EDA)(FA)(2)[Pb3I10] film has a layered structure, which can reduce the degradation caused by moisture. What's more, UV-Vis light absorption spectroscopy and atomic force microscopy(AFM) results show that the layered structure film is also a suitable absorber for perovskite solar cells. Photoluminescence spectrum(PL) reveals that bandgap of the (EDA)(FA)(2)[Pb3I10] film is 1.67 eV, which is close to the optimum value for solar photoelectric conversion. As compared to CH3NH3PbI3 film, the low-cost perovskite structure offers greater tunability on a molecular level for further material optimization and possibility for widely used in the future.
KeywordOne-step Method Perovskite Gixrd (Eda)(Fa)(2)[Pb3i10]
DOI10.15541/jim20160156
Indexed BySCI
Language中文
WOS IDWOS:000387529300020
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/26504
Collection中科院上海应用物理研究所2011-2018年
Corresponding AuthorGao, YM (reprint author), Jiangsu Univ Sci & Technol, Coll Mat Sci & Engn, Zhenjiang 212003, Peoples R China.
Recommended Citation
GB/T 7714
Gao, YM,Jiang, WL,Yang, TY,et al. Fabrication and Characterization of High Stability (EDA)(FA)(2)[Pb3I10] Layered Perovskite Film[J]. JOURNAL OF INORGANIC MATERIALS,2016,31(10):1129-1134.
APA Gao, YM,Jiang, WL,Yang, TY,Zuo, YZ,&Gao, YM .(2016).Fabrication and Characterization of High Stability (EDA)(FA)(2)[Pb3I10] Layered Perovskite Film.JOURNAL OF INORGANIC MATERIALS,31(10),1129-1134.
MLA Gao, YM,et al."Fabrication and Characterization of High Stability (EDA)(FA)(2)[Pb3I10] Layered Perovskite Film".JOURNAL OF INORGANIC MATERIALS 31.10(2016):1129-1134.
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