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题名: Linking Subcellular Disturbance to Physiological Behavior and Toxicity Induced by Quantum Dots in Caenorhabditis elegans
作者: Wang, Q; Zhou, YF; Song, B; Zhong, YL; Wu, SC; Cui, RR; Cong, HX; Su, YY; Zhang, HM; He, Y
刊名: SMALL
出版日期: 2016
卷号: 12, 期号:23, 页码:3143-3154
DOI: 10.1002/smll.201600766
通讯作者: He, Y (reprint author), Soochow Univ, Collaborat Innovat Ctr Suzhou Nano Sci & Technol, Inst Funct Nano & Soft Mat FUNSOM, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Suzhou 215123, Jiangsu, Peoples R China. ; Zhang, HM (reprint author), Soochow Univ, IBMS, Suzhou 215123, Peoples R China.
文章类型: 期刊论文
英文摘要: The wide-ranging applications of fluorescent semiconductor quantum dots (QDs) have triggered increasing concerns about their biosafety. Most QD-related toxicity studies focus on the subcellular processes in cultured cells or global physiological effects on whole animals. However, it is unclear how QDs affect subcellular processes in living organisms, or how the subcellular disturbance contributes to the overall toxicity. Here the behavior and toxicity of QDs of three different sizes in Caenorhabditis elegans (C. elegans) are systematically investigated at both the systemic and the subcellular level. Specifically, clear size-dependent distribution and toxicity of the QDs in the digestive tract are observed. Short-term exposure of QDs leads to acute toxicity on C. elegans, yet incurring no lasting, irreversible damage. In contrast, chronic exposure of QDs severely inhibits development and shortens lifespan. Subcellular analysis reveals that endocytosis and nutrition storage are disrupted by QDs, which likely accounts for the severe deterioration in growth and longevity. This work reveals that QDs invasion disrupts key subcellular processes in living organisms, and may cause permanent damage to the tissues and organs over long-term retention. The findings provide invaluable information for safety evaluations of QD-based applications and offer new opportunities for design of novel nontoxic nanoprobes.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000378654700009
ISSN号: 1613-6810
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/26561
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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