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| Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility | |
| Fan, D; Buitrago, E; Yang, SM; Karim, W; Wu, YQ; Tai, RZ; Ekinci, Y; Buitrago, E (reprint author), Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland.; Yang, SM (reprint author), Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai, Peoples R China. | |
| 2016 | |
| 发表期刊 | MICROELECTRONIC ENGINEERING
 |
| ISSN | 0167-9317 |
| 卷号 | 155页码:55-60 |
| 文章类型 | 期刊论文 |
| 摘要 | Achromatic Talbot lithography (ATL) at extreme ultraviolet (EUV) wavelengths has been used to produce one or two-dimensional periodic patterns over large areas. In this work, an ATL transmission mask was used to perform EUV exposures at 13.5 nm and 8.8 nm illumination wavelengths at two different synchrotron facilities, to study the broadband nature of the method and the used mask as well as to investigate the influence of illumination parameters and experimental arrangements. The experiments were performed at the Swiss Light Source (SLS), PSI, Switzerland, and at the Shanghai Synchrotron Radiation Facility (SSRF), P. R. China. Achromatic Talbot lithography was proven to be a simple and robust interference lithography scheme for producing large area and high resolution patterns suitable for different wavelengths and for a variety of EUV sources and setups. (C) 2016 Elsevier B.V. All rights reserved. |
| 关键词 | Euv Interference Lithography High Resolution Nano-lithography Achromatic Talbot Lithography |
| DOI | 10.1016/j.mee.2016.02.026 |
| 收录类别 | SCI |
| 语种 | 英语 |
| WOS记录号 | WOS:000378962700013 |
| 引用统计 | |
| 文献类型 | 期刊论文 |
| 条目标识符 | http://ir.sinap.ac.cn/handle/331007/26592 |
| 专题 | 中科院上海应用物理研究所2011-2018年 |
| 通讯作者 | Fan, D; Buitrago, E (reprint author), Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland.; Yang, SM (reprint author), Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai, Peoples R China. |
| 推荐引用方式 GB/T 7714 | Fan, D,Buitrago, E,Yang, SM,et al. Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility[J]. MICROELECTRONIC ENGINEERING,2016,155:55-60. |
| APA | Fan, D.,Buitrago, E.,Yang, SM.,Karim, W.,Wu, YQ.,...&Yang, SM .(2016).Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility.MICROELECTRONIC ENGINEERING,155,55-60. |
| MLA | Fan, D,et al."Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility".MICROELECTRONIC ENGINEERING 155(2016):55-60. |
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| Patterning of nanodo（1812KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | 浏览 下载 | |
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