Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility

doi:10.1016/j.mee.2016.02.026

CAS OpenIR > 中科院上海应用物理研究所2011-2018年

	Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility
	Fan, D; Buitrago, E; Yang, SM; Karim, W; Wu, YQ; Tai, RZ; Ekinci, Y; Buitrago, E (reprint author), Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland.; Yang, SM (reprint author), Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai, Peoples R China.
	2016
发表期刊	MICROELECTRONIC ENGINEERING
ISSN	0167-9317
卷号	155 页码:55-60
文章类型	期刊论文
摘要	Achromatic Talbot lithography (ATL) at extreme ultraviolet (EUV) wavelengths has been used to produce one or two-dimensional periodic patterns over large areas. In this work, an ATL transmission mask was used to perform EUV exposures at 13.5 nm and 8.8 nm illumination wavelengths at two different synchrotron facilities, to study the broadband nature of the method and the used mask as well as to investigate the influence of illumination parameters and experimental arrangements. The experiments were performed at the Swiss Light Source (SLS), PSI, Switzerland, and at the Shanghai Synchrotron Radiation Facility (SSRF), P. R. China. Achromatic Talbot lithography was proven to be a simple and robust interference lithography scheme for producing large area and high resolution patterns suitable for different wavelengths and for a variety of EUV sources and setups. (C) 2016 Elsevier B.V. All rights reserved.
关键词	Euv Interference Lithography High Resolution Nano-lithography Achromatic Talbot Lithography
DOI	10.1016/j.mee.2016.02.026
收录类别	SCI
语种	英语
WOS记录号	WOS:000378962700013
引用统计	被引频次：7[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.sinap.ac.cn/handle/331007/26592
专题	中科院上海应用物理研究所2011-2018年
通讯作者	Fan, D; Buitrago, E (reprint author), Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland.; Yang, SM (reprint author), Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai, Peoples R China.
推荐引用方式 GB/T 7714	Fan, D,Buitrago, E,Yang, SM,et al. Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility[J]. MICROELECTRONIC ENGINEERING,2016,155:55-60.
APA	Fan, D.,Buitrago, E.,Yang, SM.,Karim, W.,Wu, YQ.,...&Yang, SM .(2016).Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility.MICROELECTRONIC ENGINEERING,155,55-60.
MLA	Fan, D,et al."Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility".MICROELECTRONIC ENGINEERING 155(2016):55-60.

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