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Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility
Fan, D; Buitrago, E; Yang, SM; Karim, W; Wu, YQ; Tai, RZ; Ekinci, Y; Buitrago, E (reprint author), Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland.; Yang, SM (reprint author), Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai, Peoples R China.
2016
Source PublicationMICROELECTRONIC ENGINEERING
ISSN0167-9317
Volume155Pages:55-60
Subtype期刊论文
AbstractAchromatic Talbot lithography (ATL) at extreme ultraviolet (EUV) wavelengths has been used to produce one or two-dimensional periodic patterns over large areas. In this work, an ATL transmission mask was used to perform EUV exposures at 13.5 nm and 8.8 nm illumination wavelengths at two different synchrotron facilities, to study the broadband nature of the method and the used mask as well as to investigate the influence of illumination parameters and experimental arrangements. The experiments were performed at the Swiss Light Source (SLS), PSI, Switzerland, and at the Shanghai Synchrotron Radiation Facility (SSRF), P. R. China. Achromatic Talbot lithography was proven to be a simple and robust interference lithography scheme for producing large area and high resolution patterns suitable for different wavelengths and for a variety of EUV sources and setups. (C) 2016 Elsevier B.V. All rights reserved.
KeywordEuv Interference Lithography High Resolution Nano-lithography Achromatic Talbot Lithography
DOI10.1016/j.mee.2016.02.026
Indexed BySCI
Language英语
WOS IDWOS:000378962700013
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/26592
Collection中科院上海应用物理研究所2011-2018年
Corresponding AuthorFan, D; Buitrago, E (reprint author), Paul Scherrer Inst, Lab Micro & Nanotechnol, CH-5232 Villigen, Switzerland.; Yang, SM (reprint author), Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, 239 Zhangheng Rd, Shanghai, Peoples R China.
Recommended Citation
GB/T 7714
Fan, D,Buitrago, E,Yang, SM,et al. Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility[J]. MICROELECTRONIC ENGINEERING,2016,155:55-60.
APA Fan, D.,Buitrago, E.,Yang, SM.,Karim, W.,Wu, YQ.,...&Yang, SM .(2016).Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility.MICROELECTRONIC ENGINEERING,155,55-60.
MLA Fan, D,et al."Patterning of nanodot-arrays using EUV achromatic Talbot lithography at the Swiss Light Source and Shanghai Synchrotron Radiation Facility".MICROELECTRONIC ENGINEERING 155(2016):55-60.
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