Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| Preparation and Luminescence Properties of Lu2SiO5: Ce3+ Thin Film | |
| Wu, S; Liu, B; Chen, SW; Zhang, JN; Liu, XL; Gu, M; Huang, SM; Ni, C; Xue, CF; Wu, S (reprint author), Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China. | |
| 2016 | |
| Source Publication | JOURNAL OF INORGANIC MATERIALS
 |
| ISSN | 1000-324X |
| Volume | 31Issue:9Pages:948-954 |
| Subtype | 期刊论文 |
| Abstract | Lu2SiO5: Ce3+ thin film is a promising material for X-ray detection due to its high light output, short decay time, high density, and high spatial resolution. In present work, Lu2SiO5: Ce3+ thin films were prepared by Sol-Gel method. The optimal experimental conditions were obtained concerning solid content, adhesive content, water content, and annealing progress. Under the conditions with air humidity of 85%, sol's H2O-Si ratio of 6.6, appropriate amount of PEG400, optimized solid content, and sintering starting from 450 degrees C, the thin films are prepared crack-free with high transparence and excellent luminescent properties. The thickness of its single layer is 167 nm. It is found that water content is the major factor that causes film foggy, and sintering progress affects the reaction of organics and crystallization. Furthermore, solid content and the adhesive content are the two factors controlling the film thickness. The present study may promote the application of Lu2SiO5: Ce3+ thin films in detection systems. |
| Keyword | Lu2sio5: Ce3++ Thin Film H2o-si Ratio Sintering Process Adhesive Solid Content Luminescence Properties |
| DOI | 10.15541/jim20160034 |
| Indexed By | SCI |
| Language | 中文 |
| WOS ID | WOS:000383397000008 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/26600 |
| Collection | 中科院上海应用物理研究所2011-2019年 |
| Corresponding Author | Wu, S (reprint author), Tongji Univ, Sch Phys Sci & Engn, Shanghai Key Lab Special Artificial Microstruct M, Shanghai 200092, Peoples R China. |
| Recommended Citation GB/T 7714 | Wu, S,Liu, B,Chen, SW,et al. Preparation and Luminescence Properties of Lu2SiO5: Ce3+ Thin Film[J]. JOURNAL OF INORGANIC MATERIALS,2016,31(9):948-954. |
| APA | Wu, S.,Liu, B.,Chen, SW.,Zhang, JN.,Liu, XL.,...&Wu, S .(2016).Preparation and Luminescence Properties of Lu2SiO5: Ce3+ Thin Film.JOURNAL OF INORGANIC MATERIALS,31(9),948-954. |
| MLA | Wu, S,et al."Preparation and Luminescence Properties of Lu2SiO5: Ce3+ Thin Film".JOURNAL OF INORGANIC MATERIALS 31.9(2016):948-954. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Preparation and Lumi（550KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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