中国科学院上海应用物理研究所机构知识库
Advanced  
CAS OpenIR  > 中科院上海应用物理研究所2011-2017年  > 期刊论文
题名: Semiconducting boron carbides with better charge extraction through the addition of pyridine moieties
作者: Echeverria, E; Dong, B; Peterson, G; Silva, JP; Wilson, ER; Driver, MS; Jun, YS; Stucky, GD; Knight, S; Hofmann, T; Han, ZK; Shao, N; Gao, Y; Mei, WN; Nastasi, M; Dowben, PA; Kelber, JA
刊名: JOURNAL OF PHYSICS D-APPLIED PHYSICS
出版日期: 2016
卷号: 49, 期号:35, 页码:-
关键词: boron carbides ; pyridine ; PECVD ; ellipsometry
DOI: 10.1088/0022-3727/49/35/355302
通讯作者: Echeverria, E (reprint author), Univ Nebraska Lincoln, Dept Phys & Astron, Jorgensen Hall,855 North 16th St, Lincoln, NE 68588 USA.
文章类型: 期刊论文
英文摘要: The plasma-enhanced chemical vapor (PECVD) co-deposition of pyridine and 1,2 dicarbadodecaborane, 1,2-B10C2H12 (orthocarborane) results in semiconducting boron carbide composite films with a significantly better charge extraction than plasma-enhanced chemical vapor deposited semiconducting boron carbide synthesized from orthocarborane alone. The PECVD pyridine/orthocarborane based semiconducting boron carbide composites, with pyridine/orthocarborane ratios similar to 3:1 or 9:1 exhibit indirect band gaps of 1.8 eV or 1.6 eV, respectively. These energies are less than the corresponding exciton energies of 2.0 eV-2.1 eV. The capacitance/voltage and current/voltage measurements indicate the hole carrier lifetimes for PECVD pyridine/orthocarborane based semiconducting boron carbide composites (3:1) films of similar to 350 mu s compared to values of <= 35 mu s for the PECVD semiconducting boron carbide films fabricated without pyridine. The hole carrier lifetime values are significantly longer than the initial exciton decay times in the region of similar to 0.05 ns and 0.27 ns for PECVD semiconducting boron carbide films with and without pyridine, respectively, as suggested by the time-resolved photoluminescence. These data indicate enhanced electron-hole separation and charge carrier lifetimes in PECVD pyridine/orthocarborane based semiconducting boron carbide and are consistent with the results of zero bias neutron voltaic measurements indicating significantly enhanced charge collection efficiency.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000384051300014
ISSN号: 0022-3727
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/26619
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

Files in This Item: Download All
File Name/ File Size Content Type Version Access License
Semiconducting boron carbides with better charge extraction through the addition of pyridine moieties.pdf(1522KB)期刊论文作者接受稿开放获取View Download
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Echeverria, E]'s Articles
[Dong, B]'s Articles
[Peterson, G]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Echeverria, E]‘s Articles
[Dong, B]‘s Articles
[Peterson, G]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名: Semiconducting boron carbides with better charge extraction through the addition of pyridine moieties.pdf
格式: Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放,请您登录
您对该条目有什么异议,请填写以下表单,管理员会尽快联系您。
内 容:
Email:  *
单位:
验证码:   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题:
 *
内 容:
Email:  *
验证码:   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 

Valid XHTML 1.0!
Powered by CSpace