Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology

doi:10.1016/j.mee.2016.06.002

CAS OpenIR > 中科院上海应用物理研究所2011-2018年

	Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology
	Wang, GL; Qin, CL; Yin, HX; Luo, J; Duan, NY; Yang, P; Gao, XY; Yang, T; Li, JF; Yan, J; Zhu, HL; Wang, WW; Chen, DP; Ye, TC; Zhao, C; Radamson, HH; Luo, J (reprint author), Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
	2016
发表期刊	MICROELECTRONIC ENGINEERING
ISSN	0167-9317
卷号	163 页码:49-54
文章类型	期刊论文
摘要	In this study, the process integration of SiGe selective epitaxy on source/drain regions, for 16/14 nm nodes FinFET with high-k & metal gate has been presented. Selectively grown Si1-xGex (0.35 <= x <= 0.40) with boron concentration of 1 x 10(20) cm(-3) was used to elevate the source/drain of the transistors. The epi-quality, layer profile and strain amount of the selectively grown SiGe layers were also investigated by means of various characterizations. A series of prebaking experiments were performed for temperatures ranging from 740 to 825 degrees C in order to in situ clean the Si fins prior to the epitaxy. The results showed that the thermal budget needs to be limited to 780-800 degrees C in order to avoid any damages to the shape of Si fins but to remove the native oxide effectively which is essential for high epitaxial quality. The Ge content in SiGe layers on Si fins was determined from the strain measured directly by reciprocal space mappings using synchrotron radiation. Atomic layer deposition technique was applied to fill the gate trench with W using WF6 and B2H6 precursors. By such an AID approach, decent growth rate, low resistivity and excellent gap filling capability of W in pretty high aspect-ratio gate trench was realized. The as-fabricated FinFETs demonstrated decent electrical characteristics. (C) 2016 Elsevier B.V. All rights reserved.
关键词	Finfet Sige Selective Epitaxy Rpcvd High-k & Metal Gate
DOI	10.1016/j.mee.2016.06.002
收录类别	SCI
语种	英语
WOS记录号	WOS:000381837300008
引用统计
文献类型	期刊论文
条目标识符	http://ir.sinap.ac.cn/handle/331007/26635
专题	中科院上海应用物理研究所2011-2018年
通讯作者	Wang, GL; Luo, J (reprint author), Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China.
推荐引用方式 GB/T 7714	Wang, GL,Qin, CL,Yin, HX,et al. Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology[J]. MICROELECTRONIC ENGINEERING,2016,163:49-54.
APA	Wang, GL.,Qin, CL.,Yin, HX.,Luo, J.,Duan, NY.,...&Luo, J .(2016).Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology.MICROELECTRONIC ENGINEERING,163,49-54.
MLA	Wang, GL,et al."Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology".MICROELECTRONIC ENGINEERING 163(2016):49-54.

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