Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology | |
| Wang, GL; Qin, CL; Yin, HX; Luo, J; Duan, NY; Yang, P; Gao, XY; Yang, T; Li, JF; Yan, J; Zhu, HL; Wang, WW; Chen, DP; Ye, TC; Zhao, C; Radamson, HH; Luo, J (reprint author), Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. | |
| 2016 | |
| Source Publication | MICROELECTRONIC ENGINEERING
 |
| ISSN | 0167-9317 |
| Volume | 163Pages:49-54 |
| Subtype | 期刊论文 |
| Abstract | In this study, the process integration of SiGe selective epitaxy on source/drain regions, for 16/14 nm nodes FinFET with high-k & metal gate has been presented. Selectively grown Si1-xGex (0.35 <= x <= 0.40) with boron concentration of 1 x 10(20) cm(-3) was used to elevate the source/drain of the transistors. The epi-quality, layer profile and strain amount of the selectively grown SiGe layers were also investigated by means of various characterizations. A series of prebaking experiments were performed for temperatures ranging from 740 to 825 degrees C in order to in situ clean the Si fins prior to the epitaxy. The results showed that the thermal budget needs to be limited to 780-800 degrees C in order to avoid any damages to the shape of Si fins but to remove the native oxide effectively which is essential for high epitaxial quality. The Ge content in SiGe layers on Si fins was determined from the strain measured directly by reciprocal space mappings using synchrotron radiation. Atomic layer deposition technique was applied to fill the gate trench with W using WF6 and B2H6 precursors. By such an AID approach, decent growth rate, low resistivity and excellent gap filling capability of W in pretty high aspect-ratio gate trench was realized. The as-fabricated FinFETs demonstrated decent electrical characteristics. (C) 2016 Elsevier B.V. All rights reserved. |
| Keyword | Finfet Sige Selective Epitaxy Rpcvd High-k & Metal Gate |
| DOI | 10.1016/j.mee.2016.06.002 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000381837300008 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/26635 |
| Collection | 中科院上海应用物理研究所2011-2018年 |
| Corresponding Author | Wang, GL; Luo, J (reprint author), Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China. |
| Recommended Citation GB/T 7714 | Wang, GL,Qin, CL,Yin, HX,et al. Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology[J]. MICROELECTRONIC ENGINEERING,2016,163:49-54. |
| APA | Wang, GL.,Qin, CL.,Yin, HX.,Luo, J.,Duan, NY.,...&Luo, J .(2016).Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology.MICROELECTRONIC ENGINEERING,163,49-54. |
| MLA | Wang, GL,et al."Study of SiGe selective epitaxial process integration with high-k and metal gate for 16/14 nm nodes FinFET technology".MICROELECTRONIC ENGINEERING 163(2016):49-54. |
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| Study of SiGe select（1459KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Download | |
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