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题名:
A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application
作者: Cheng, GD; Zhang, YG; Yan, L; Huang, HF; Huang, Q; Song, YX; Chen, Y; Tang, Z
刊名: COMPUTATIONAL MATERIALS SCIENCE
出版日期: 2017
卷号: 129, 页码:247-251
关键词: Qubit ; Defect ; First-principle calculations ; Spin coherence time
DOI: 10.1016/j.commatsci.2016.12.032
文章类型: 期刊论文
英文摘要: First-principles calculations in combination with group theory analyses were employed to study the spin polarized electronic structures of CBVN centers consisting of a nitrogen vacancy and a substitutional carbon atom in hexagonal boron nitride (h-BN) monolayer with different charge states. It is clarified that the paramagnetic neutral CBVN center is stable in the n-type h-BN monolayer. The neutral defect center possesses a triplet (S = 1) ground state and with two spin-conserved optical vertical transition. Its spin coherence time is estimated to be 3.9 ms at T = 0 K by a simple scheme combining the mean-field theory and the first-principles calculations. The results indicate that the neutral CBVN center is very suitable for achieving spin qubit. (C) 2017 Elsevier B.V. All rights reserved.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000394065000030
ISSN号: 0927-0256
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/27245
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Cheng, GD,Zhang, YG,Yan, L,et al. A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application[J]. COMPUTATIONAL MATERIALS SCIENCE,2017-01-01,129:247-251.
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