A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application
Cheng, GD; Zhang, YG; Yan, L; Huang, HF; Huang, Q; Song, YX; Chen, Y; Tang, Z
2017
发表期刊COMPUTATIONAL MATERIALS SCIENCE
ISSN0927-0256
卷号129页码:247-251
文章类型期刊论文
摘要First-principles calculations in combination with group theory analyses were employed to study the spin polarized electronic structures of CBVN centers consisting of a nitrogen vacancy and a substitutional carbon atom in hexagonal boron nitride (h-BN) monolayer with different charge states. It is clarified that the paramagnetic neutral CBVN center is stable in the n-type h-BN monolayer. The neutral defect center possesses a triplet (S = 1) ground state and with two spin-conserved optical vertical transition. Its spin coherence time is estimated to be 3.9 ms at T = 0 K by a simple scheme combining the mean-field theory and the first-principles calculations. The results indicate that the neutral CBVN center is very suitable for achieving spin qubit. (C) 2017 Elsevier B.V. All rights reserved.
关键词Qubit Defect First-principle Calculations Spin Coherence Time
DOI10.1016/j.commatsci.2016.12.032
收录类别SCI
语种英语
WOS记录号WOS:000394065000030
引用统计
被引频次:5[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/27245
专题中科院上海应用物理研究所2011-2018年
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Cheng, GD,Zhang, YG,Yan, L,et al. A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application[J]. COMPUTATIONAL MATERIALS SCIENCE,2017,129:247-251.
APA Cheng, GD.,Zhang, YG.,Yan, L.,Huang, HF.,Huang, Q.,...&Tang, Z.(2017).A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application.COMPUTATIONAL MATERIALS SCIENCE,129,247-251.
MLA Cheng, GD,et al."A paramagnetic neutral CBVN center in hexagonal boron nitride monolayer for spin qubit application".COMPUTATIONAL MATERIALS SCIENCE 129(2017):247-251.
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