中国科学院上海应用物理研究所机构知识库
Register
Email:
Passwd
验 证:
换一张
Have you forgotten your password? Log In
Advanced  
  Communities
  Subjects
  All Items
CAS OpenIR  > 中科院上海应用物理研究所2011-2017年  > 期刊论文
题名:
Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
作者: Yang, LF; Wang, T; Zou, Y; Lu, HL
刊名: NANOSCALE RESEARCH LETTERS
出版日期: 2017
卷号: 12, 页码:-
关键词: Band alignments ; HfAlO dielectric ; InP ; Atomic layer deposition
DOI: 10.1186/s11671-017-2104-y
文章类型: 期刊论文
英文摘要: X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al2O3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 +/- 0.1 and 2.83 +/- 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000400960100002
ISSN号: 1556-276X
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/27265
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

Files in This Item: Download All
File Name/ File Size Content Type Version Access License
Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.pdf（1221KB）期刊论文作者接受稿开放获取
CC BY-NC-SA
View Download

Recommended Citation:
Yang, LF,Wang, T,Zou, Y,et al. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition[J]. NANOSCALE RESEARCH LETTERS,2017-01-01,12:-.
Service
Recommend this item
Sava as my favorate item
Show this item's statistics
Export Endnote File
Google Scholar
Similar articles in Google Scholar
[Yang, LF]'s Articles
[Wang, T]'s Articles
[Zou, Y]'s Articles
CSDL cross search
Similar articles in CSDL Cross Search
[Yang, LF]‘s Articles
[Wang, T]‘s Articles
[Zou, Y]‘s Articles
Related Copyright Policies
Null
Social Bookmarking
Add to CiteULike Add to Connotea Add to Del.icio.us Add to Digg Add to Reddit
文件名： Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.pdf
格式： Adobe PDF
所有评论 (0)
暂无评论
 
评注功能仅针对注册用户开放，请您登录
您对该条目有什么异议，请填写以下表单，管理员会尽快联系您。
内 容：
Email：  *
单位：
验证码：   刷新
您在IR的使用过程中有什么好的想法或者建议可以反馈给我们。
标 题：
  * 
内 容：
Email：  *
验证码：   刷新

Items in IR are protected by copyright, with all rights reserved, unless otherwise indicated.

 

 
Valid XHTML 1.0!
Powered by CSpace