Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
Yang, LF; Wang, T; Zou, Y; Lu, HL
2017
发表期刊NANOSCALE RESEARCH LETTERS
ISSN1556-276X
卷号12页码:-
文章类型期刊论文
摘要X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al2O3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 +/- 0.1 and 2.83 +/- 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.
关键词Band Alignments Hfalo Dielectric Inp Atomic Layer Deposition
DOI10.1186/s11671-017-2104-y
收录类别SCI
语种英语
WOS记录号WOS:000400960100002
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/27265
专题中科院上海应用物理研究所2011-2018年
推荐引用方式
GB/T 7714
Yang, LF,Wang, T,Zou, Y,et al. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition[J]. NANOSCALE RESEARCH LETTERS,2017,12:-.
APA Yang, LF,Wang, T,Zou, Y,&Lu, HL.(2017).Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.NANOSCALE RESEARCH LETTERS,12,-.
MLA Yang, LF,et al."Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition".NANOSCALE RESEARCH LETTERS 12(2017):-.
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