CAS OpenIR  > 中科院上海应用物理研究所2011-2018年
Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
Yang, LF; Wang, T; Zou, Y; Lu, HL
2017
Source PublicationNANOSCALE RESEARCH LETTERS
ISSN1556-276X
Volume12Pages:-
Subtype期刊论文
AbstractX-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al2O3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 +/- 0.1 and 2.83 +/- 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.
KeywordBand Alignments Hfalo Dielectric Inp Atomic Layer Deposition
DOI10.1186/s11671-017-2104-y
Indexed BySCI
Language英语
WOS IDWOS:000400960100002
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/27265
Collection中科院上海应用物理研究所2011-2018年
Recommended Citation
GB/T 7714
Yang, LF,Wang, T,Zou, Y,et al. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition[J]. NANOSCALE RESEARCH LETTERS,2017,12:-.
APA Yang, LF,Wang, T,Zou, Y,&Lu, HL.(2017).Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.NANOSCALE RESEARCH LETTERS,12,-.
MLA Yang, LF,et al."Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition".NANOSCALE RESEARCH LETTERS 12(2017):-.
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