Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition

doi:10.1186/s11671-017-2104-y

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	Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
	Yang, LF; Wang, T; Zou, Y; Lu, HL
	2017
发表期刊	NANOSCALE RESEARCH LETTERS
ISSN	1556-276X
卷号	12 页码:-
文章类型	期刊论文
摘要	X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al2O3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 +/- 0.1 and 2.83 +/- 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.
关键词	Band Alignments Hfalo Dielectric Inp Atomic Layer Deposition
DOI	10.1186/s11671-017-2104-y
收录类别	SCI
语种	英语
WOS记录号	WOS:000400960100002
引用统计
文献类型	期刊论文
条目标识符	http://ir.sinap.ac.cn/handle/331007/27265
专题	中科院上海应用物理研究所2011-2018年
推荐引用方式 GB/T 7714	Yang, LF,Wang, T,Zou, Y,et al. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition[J]. NANOSCALE RESEARCH LETTERS,2017,12:-.
APA	Yang, LF,Wang, T,Zou, Y,&Lu, HL.(2017).Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.NANOSCALE RESEARCH LETTERS,12,-.
MLA	Yang, LF,et al."Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition".NANOSCALE RESEARCH LETTERS 12(2017):-.

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