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CAS OpenIR  > 中科院上海应用物理研究所2011-2017年  > 期刊论文
题名:
Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition
作者: Yang, LF; Wang, T; Zou, Y; Lu, HL
刊名: NANOSCALE RESEARCH LETTERS
出版日期: 2017
卷号: 12, 页码:-
关键词: Band alignments ; HfAlO dielectric ; InP ; Atomic layer deposition
DOI: 10.1186/s11671-017-2104-y
文章类型: 期刊论文
英文摘要: X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy have been used to determine interfacial properties of HfO2 and HfAlO gate dielectrics grown on InP by atomic layer deposition. An undesirable interfacial InPxOy layer is easily formed at the HfO2/InP interface, which can severely degrade the electrical performance. However, an abrupt interface can be achieved when the growth of the HfAlO dielectric on InP starts with an ultrathin Al2O3 layer. The valence and conduction band offsets for HfAlO/InP heterojunctions have been determined to be 1.87 +/- 0.1 and 2.83 +/- 0.1 eV, respectively. These advantages make HfAlO a potential dielectric for InP MOSFETs.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000400960100002
ISSN号: 1556-276X
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/27265
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Yang, LF,Wang, T,Zou, Y,et al. Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition[J]. NANOSCALE RESEARCH LETTERS,2017-01-01,12:-.
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文件名: Band Offsets and Interfacial Properties of HfAlO Gate Dielectric Grown on InP by Atomic Layer Deposition.pdf
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