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| Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals | |
| Ye, L; Li, HY; Wang, C; Shi, J; Chen, XF; Wang, ZQ; Huang, YF; Xu, JY; Ren, GH | |
| 2017 | |
| Source Publication | OPTICAL MATERIALS
 |
| ISSN | 0925-3467 |
| Volume | 64Pages:121-125 |
| Subtype | 期刊论文 |
| Abstract | The growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals were reported in this paper. These GdI3:chi%Ce (chi = 0, 1, 2) crystals were grown by the vertical Bridgman growth technique in evacuated quartz crucibles. X-ray excited optical luminescence spectra of GdI3:Ce exhibit a broad emission band (450 nm-650 nm) peaking at 520 nm corresponding to 5d(1)-> 4f(1) transition of Ce3+ while the undoped GdI3 crystal consists of a broad band (400 nm-600 nm) and several sharp lines peaking at 462 nm, 482 nm, 492 nm, 549 nm, 579 nm owing to the impurities ions and defects. The excitation spectra of Ce3+ doped GdI3 consist of two broad bands between 300 nm and 500 nm corresponding to 4f(1)-> 5d(1) absorption of Ce3+. The other absorption peaking at 262 nm in the spectrum of GdI3:2%Ce is assigned to band-to-band exciton transition. The excitation spectrum of undoped GdI3 contains a flat absorption band from 330 to 370 nm and a broad band between 390 and 450 nm peaking at 414 nm corresponding to the absorption of the unintentionally doped Ce3+, Dy3+, Ho3+ impurities and other defects. The emission spectrum of undoped GdI3 under 332 nm excitation has the identical line peaks with the spectrum measured under X-ray excitation. The emission spectra of GdI3:2%Ce and GdI3:1%Ce show a broad band in the range of 450-750 nm with the maximum at 550 nm corresponding to 5d(1)-> 4f(1) transitions of Ce3+ ion. The GdI3, GdI3:1%Ce and GdI3:2%Ce show fast principle decay time constant 73 ns, 69 ns and 58 ns respectively, besides, the undoped also shows a slow decay constant 325 ns which doesn't appear in Ce3+-doped GdI3 crystal. The energy resolutions of GdI3:chi%Ce (chi = 1, 2) measured at 662 KeV are about 3%-5% and the undoped GdI3 is 13.3%. (C) 2016 Elsevier B.V. All rights reserved. |
| Keyword | Scintillator Gdi3 Single Crystal Growth Bridgman Technique Ce3++ Luminescence |
| DOI | 10.1016/j.optmat.2016.11.048 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000394635200020 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/27287 |
| Collection | 中科院上海应用物理研究所2011-2020年 |
| Recommended Citation GB/T 7714 | Ye, L,Li, HY,Wang, C,et al. Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals[J]. OPTICAL MATERIALS,2017,64:121-125. |
| APA | Ye, L.,Li, HY.,Wang, C.,Shi, J.,Chen, XF.,...&Ren, GH.(2017).Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals.OPTICAL MATERIALS,64,121-125. |
| MLA | Ye, L,et al."Crystal growth and scintillation properties of undoped and Ce3+-doped GdI3 crystals".OPTICAL MATERIALS 64(2017):121-125. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Crystal growth and s（1585KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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