CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Growth-Controlled Engineering of Magnetic Exchange Interactions in Single Crystalline GaCoZnO1-v Epitaxial Films with High Co Concentration
Cao, Q; Fu, MX; Zhu, DP; Yao, MY; Hu, SJ; Chen, YX; Yan, SS; Liu, GL; Qian, D; Gao, XY; Mei, LM; Wang, XL
2017
Source PublicationCHEMISTRY OF MATERIALS
ISSN0897-4756
Volume29Issue:7Pages:2717-2723
Subtype期刊论文
AbstractWhile semiconductor spintronics promises lower switching energy and faster speed, a major limitation development lack on its as a viable technology is the of room temperature ferromagnetic semiconductor materials. The material challenge is because not only magnetic and great, electronic doping but also thermally robust coupling between them are required for a room temperature ferromagnetic semiconductor. Here, we report the growth-controlled engineering of magnetic exchange interactions in single crystalline GaCoZnO1-v epitaxial films with high Co concentrations (0.3 <= x <= 0.45) by controlling oxygen vacancy and carrier density through Ga3+ doping. Strong ferromagnetism, spin-split impurity states, and spin-polarized electrical transport are realized and well controlled at room temperature by tailoring the s,p-d exchange coupling. This room temperature ferromagnetic semiconductor, which offers the ability to individually control carrier density and magnetic doping, will lay a solid foundation for the development of practical spintronic devices operating at room temperature.
DOI10.1021/acs.chemmater.6b03339
Indexed BySCI
Language英语
WOS IDWOS:000399264100014
Citation statistics
Cited Times:2[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/27341
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Cao, Q,Fu, MX,Zhu, DP,et al. Growth-Controlled Engineering of Magnetic Exchange Interactions in Single Crystalline GaCoZnO1-v Epitaxial Films with High Co Concentration[J]. CHEMISTRY OF MATERIALS,2017,29(7):2717-2723.
APA Cao, Q.,Fu, MX.,Zhu, DP.,Yao, MY.,Hu, SJ.,...&Wang, XL.(2017).Growth-Controlled Engineering of Magnetic Exchange Interactions in Single Crystalline GaCoZnO1-v Epitaxial Films with High Co Concentration.CHEMISTRY OF MATERIALS,29(7),2717-2723.
MLA Cao, Q,et al."Growth-Controlled Engineering of Magnetic Exchange Interactions in Single Crystalline GaCoZnO1-v Epitaxial Films with High Co Concentration".CHEMISTRY OF MATERIALS 29.7(2017):2717-2723.
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