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题名:
Investigation of the damage behavior in CVD SiC irradiated with 70 keV He ions by NEXAFS, Raman and TEM
作者: Liu, M; Yang, XM; Gao, YT; Liu, RD; Huang, HF; Zhou, XT; Sham, TK
刊名: JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
出版日期: 2017
卷号: 37, 期号:4, 页码:1253-1259
关键词: NEXAFS ; Raman ; Irradiation ; Amorphization ; Stacking faults
DOI: 10.1016/j.jeurceramsoc.2016.11.046
文章类型: 期刊论文
英文摘要: Chemical vapor deposited (CVD) SiC was irradiated with 70 keV He ions at room temperature. The damage behavior was investigated by near edge X-ray absorption fine structure (NEXAFS) spectroscopy, Raman spectroscopy and transmission electron microscopy (TEM). NEXAFS spectra at the Si K-edge display the obvious decrease in intensity of crystalline peaks and near disappearance of the peak at 1852 eV, suggesting an increase in crystalline disorder resulting from an increased number of Si vacancies caused by irradiation. Raman spectra show the decomposition of crystalline Si-C bonds and the formation of homonuclear (Si-Si and C-C) bonds during irradiation. TEM results show the transition from slight disorder to full amorphization with increasing dose. The dose to amorphization (DTA) is estimated to be about 1 dpa. It is also found that high density of stacking faults in CVD SiC may contribute to the enhancement of amorphization resistance compared to single crystal beta-SiC. (C) 2016 Elsevier Ltd. All rights reserved.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000394482700011
ISSN号: 0955-2219
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/27360
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Liu, M,Yang, XM,Gao, YT,et al. Investigation of the damage behavior in CVD SiC irradiated with 70 keV He ions by NEXAFS, Raman and TEM[J]. JOURNAL OF THE EUROPEAN CERAMIC SOCIETY,2017-01-01,37(4):1253-1259.
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文件名: Investigation of the damage behavior in CVD SiC irradiated with 70 keV He ions by NEXAFS, Raman and TEM.pdf
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