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CAS OpenIR  > 中科院上海应用物理研究所2011-2017年  > 期刊论文
题名:
Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)(2)As-2
作者: Wang, R; Huang, ZX; Zhao, GQ; Yu, S; Deng, Z; Jin, CQ; Jia, QJ; Chen, Y; Yang, TY; Jiang, XM; Cao, LX
刊名: AIP ADVANCES
出版日期: 2017
卷号: 7, 期号:4, 页码:-
DOI: 10.1063/1.4982713
文章类型: 期刊论文
英文摘要: Single-phased, single-oriented thin films of Mn-doped ZnAs-based diluted magnetic semiconductor (DMS)Ba1-xKx(Zn1-yMny)(2)As-2 (x = 0.03, 0.08; y = 0.15) have been deposited on Si, SrTiO3, LaAlO3, (La,Sr)(Al,Ta)O-3, and MgAl2O4 substrates, respectively. Utilizing a combined synthesis and characterization system excluding the air and further optimizing the deposition parameters, high-quality thin films could be obtained and be measured showing that they can keep inactive-in-air up to more than 90 hours characterized by electrical transport measurements. In comparison with films of x = 0.03 which possess relatively higher resistivity, weaker magnetic performances, and larger energy gap, thin films of x = 0.08 show better electrical and magnetic performances. Strong magnetic anisotropy was found in films of x = 0.08 grown on (La,Sr)(Al,Ta)O-3 substrate with their magnetic polarization aligned almost solely on the film growth direction. (C) 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
收录类别: SCI
语种: 英语
WOS记录号: WOS:000400396100017
ISSN号: 2158-3226
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/27404
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Wang, R,Huang, ZX,Zhao, GQ,et al. Out-of-plane easy-axis in thin films of diluted magnetic semiconductor Ba1-xKx(Zn1-yMny)(2)As-2[J]. AIP ADVANCES,2017-01-01,7(4):-.
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