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题名:
Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature
作者: Zhang, S; Gibson, QD; Yi, W; Guo, J; Wang, Z; Zhou, YZ; Wang, HH; Cai, S; Yang, K; Li, AG; Wu, Q; Cava, RJ; Sun, LL; Zhao, ZX
刊名: EPL
出版日期: 2017
卷号: 117, 期号:4, 页码:-
DOI: 10.1209/0295-5075/117/46001
文章类型: 期刊论文
英文摘要: We report high-pressure studies of the structural stability of Ru2Sn3, a new type of three-dimensional topological insulator (3D-TI) with unique quasi-one-dimensional Dirac electron states throughout the surface Brillouin zone of its one-atmosphere low-temperature orthorhombic form. Our in-situ high-pressure synchrotron x-ray diffraction and electrical resistance measurements reveal that upon increasing pressure the tetragonal-to-orthorhombic phase shifts to higher temperature. We find that the stability of the orthorhombic phase that hosts the non-trivial topological ground state can be pushed up to room temperature by an applied pressure of similar to 20 GPa. This is in contrast with the commonly known 3D-TIs whose ground state is usually destroyed under pressure. Our results indicate that pressure provides a possible pathway for realizing a room temperature topological insulating state in Ru2Sn3. Copyright (C) EPLA, 2017
收录类别: SCI
语种: 英语
WOS记录号: WOS:000401166400011
ISSN号: 0295-5075
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/27421
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Zhang, S,Gibson, QD,Yi, W,et al. Pressuring the low-temperature orthorhombic phase with a non-trivial topological state of Ru2Sn3 to room temperature[J]. EPL,2017-01-01,117(4):-.
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