Promising features of low-temperature grown Ge nanostructures on Si(001) substrates

doi:10.1088/1361-6528/aa5b3d

CAS OpenIR > 中科院上海应用物理研究所2011-2018年

	Promising features of low-temperature grown Ge nanostructures on Si(001) substrates
	Wang, Z; Wang, SG; Yin, YF; Liu, T; Lin, DD; Li, DH; Yang, XJ; Jiang, ZM; Zhong, ZY
	2017
发表期刊	NANOTECHNOLOGY
ISSN	0957-4484
卷号	28 期号:11 页码:-
文章类型	期刊论文
摘要	High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si(001) substrates at 200 degrees C and ex situ annealing at 400 degrees C. Their structural properties are comprehensively characterized by atomic force microscopy, transmission electron microscopy and Raman spectroscopy. It is disclosed that they are almost defect free except for some defects at the Ge/Si interface and in the subsequent Si capping layer. The misfit strain in the nanostructure is substantially relaxed. Dramatically strong photoluminescence (PL) from the Ge nanostructures is observed. Detailed analyses on the power-and temperature-dependent PL spectra, together with a self-consistent calculation, indicate the confinement and the high quantum efficiency of excitons within the Ge nanostructures. Our results demonstrate that the Ge nanostructures obtained via the present feasible route may have great potential in. optoelectronic devices for. monolithic optical-electronic integration circuits.
关键词	Semiconductor Nanostructure Photoluminescence Raman Spectra Molecular Beam Epitaxy
DOI	10.1088/1361-6528/aa5b3d
收录类别	SCI
语种	英语
WOS记录号	WOS:000400813200001
引用统计	被引频次：3[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.sinap.ac.cn/handle/331007/27423
专题	中科院上海应用物理研究所2011-2018年
推荐引用方式 GB/T 7714	Wang, Z,Wang, SG,Yin, YF,et al. Promising features of low-temperature grown Ge nanostructures on Si(001) substrates[J]. NANOTECHNOLOGY,2017,28(11):-.
APA	Wang, Z.,Wang, SG.,Yin, YF.,Liu, T.,Lin, DD.,...&Zhong, ZY.(2017).Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.NANOTECHNOLOGY,28(11),-.
MLA	Wang, Z,et al."Promising features of low-temperature grown Ge nanostructures on Si(001) substrates".NANOTECHNOLOGY 28.11(2017):-.

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