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题名:
Promising features of low-temperature grown Ge nanostructures on Si(001) substrates
作者: Wang, Z; Wang, SG; Yin, YF; Liu, T; Lin, DD; Li, DH; Yang, XJ; Jiang, ZM; Zhong, ZY
刊名: NANOTECHNOLOGY
出版日期: 2017
卷号: 28, 期号:11, 页码:-
关键词: semiconductor nanostructure ; photoluminescence ; Raman spectra ; molecular beam epitaxy
DOI: 10.1088/1361-6528/aa5b3d
文章类型: 期刊论文
英文摘要: High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si(001) substrates at 200 degrees C and ex situ annealing at 400 degrees C. Their structural properties are comprehensively characterized by atomic force microscopy, transmission electron microscopy and Raman spectroscopy. It is disclosed that they are almost defect free except for some defects at the Ge/Si interface and in the subsequent Si capping layer. The misfit strain in the nanostructure is substantially relaxed. Dramatically strong photoluminescence (PL) from the Ge nanostructures is observed. Detailed analyses on the power-and temperature-dependent PL spectra, together with a self-consistent calculation, indicate the confinement and the high quantum efficiency of excitons within the Ge nanostructures. Our results demonstrate that the Ge nanostructures obtained via the present feasible route may have great potential in. optoelectronic devices for. monolithic optical-electronic integration circuits.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000400813200001
ISSN号: 0957-4484
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/27423
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Wang, Z,Wang, SG,Yin, YF,et al. Promising features of low-temperature grown Ge nanostructures on Si(001) substrates[J]. NANOTECHNOLOGY,2017-01-01,28(11):-.
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