Promising features of low-temperature grown Ge nanostructures on Si(001) substrates
Wang, Z; Wang, SG; Yin, YF; Liu, T; Lin, DD; Li, DH; Yang, XJ; Jiang, ZM; Zhong, ZY
2017
发表期刊NANOTECHNOLOGY
ISSN0957-4484
卷号28期号:11页码:-
文章类型期刊论文
摘要High-quality Ge nanostructures are obtained by molecular beam epitaxy of Ge on Si(001) substrates at 200 degrees C and ex situ annealing at 400 degrees C. Their structural properties are comprehensively characterized by atomic force microscopy, transmission electron microscopy and Raman spectroscopy. It is disclosed that they are almost defect free except for some defects at the Ge/Si interface and in the subsequent Si capping layer. The misfit strain in the nanostructure is substantially relaxed. Dramatically strong photoluminescence (PL) from the Ge nanostructures is observed. Detailed analyses on the power-and temperature-dependent PL spectra, together with a self-consistent calculation, indicate the confinement and the high quantum efficiency of excitons within the Ge nanostructures. Our results demonstrate that the Ge nanostructures obtained via the present feasible route may have great potential in. optoelectronic devices for. monolithic optical-electronic integration circuits.
关键词Semiconductor Nanostructure Photoluminescence Raman Spectra Molecular Beam Epitaxy
DOI10.1088/1361-6528/aa5b3d
收录类别SCI
语种英语
WOS记录号WOS:000400813200001
引用统计
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/27423
专题中科院上海应用物理研究所2011-2018年
推荐引用方式
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Wang, Z,Wang, SG,Yin, YF,et al. Promising features of low-temperature grown Ge nanostructures on Si(001) substrates[J]. NANOTECHNOLOGY,2017,28(11):-.
APA Wang, Z.,Wang, SG.,Yin, YF.,Liu, T.,Lin, DD.,...&Zhong, ZY.(2017).Promising features of low-temperature grown Ge nanostructures on Si(001) substrates.NANOTECHNOLOGY,28(11),-.
MLA Wang, Z,et al."Promising features of low-temperature grown Ge nanostructures on Si(001) substrates".NANOTECHNOLOGY 28.11(2017):-.
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