Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films | |
| Hu, K; Yang, YJ; Hong, B; Zhao, JT; Luo, ZL; Li, XG; Zhang, XM; Gu, YL; Gao, XY; Gao, C | |
| 2017 | |
| Source Publication | JOURNAL OF ALLOYS AND COMPOUNDS
 |
| ISSN | 0925-8388 |
| Volume | 699Pages:575-580 |
| Subtype | 期刊论文 |
| Abstract | This work reports the thickness dependence of the anisotropic electronic transport in strained VO2/TiO2 (110) epitaxial thin films with the aim of exploring the strain-modulated metal-insulator transition (MIT). The MIT temperature varies from around 349 K-341 K while increasing the film thickness, which is higher than the bulk MIT temperature of 340 K. More importantly, the electrical transport property is anisotropic along the in-plane [100] and [1-10] directions and the anisotropy is further improved in thicker films. Using synchrotron radiation X-ray reciprocal space mapping (RSM) and atomic force microscopy, the thickness-dependent strain induces different stripe phase states in the VO2 thin films and thus the emergence of the distinctive anisotropic electronic transport in the vicinity of the MIT. These results provide a better understanding of the crystalline-facet-dependent strain modulation of the MIT and offer a guide for designing metamaterials based on the anisotropic features of VO2 thin films. (C) 2016 Elsevier B.V. All rights reserved. |
| Keyword | Anisotropic Metal-insulator Transition Anisotropic Electronic Transport Epitaxial Strain Vanadium Dioxide Thin Film Stripe Domain Structure |
| DOI | 10.1016/j.jallcom.2016.12.412 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000393727500081 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/27486 |
| Collection | 中科院上海应用物理研究所2011-2018年 |
| Recommended Citation GB/T 7714 | Hu, K,Yang, YJ,Hong, B,et al. Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,699:575-580. |
| APA | Hu, K.,Yang, YJ.,Hong, B.,Zhao, JT.,Luo, ZL.,...&Gao, C.(2017).Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films.JOURNAL OF ALLOYS AND COMPOUNDS,699,575-580. |
| MLA | Hu, K,et al."Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films".JOURNAL OF ALLOYS AND COMPOUNDS 699(2017):575-580. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Thickness-dependent （1725KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
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