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CAS OpenIR  > 中科院上海应用物理研究所2011-2017年  > 期刊论文
题名:
Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films
作者: Hu, K; Yang, YJ; Hong, B; Zhao, JT; Luo, ZL; Li, XG; Zhang, XM; Gu, YL; Gao, XY; Gao, C
刊名: JOURNAL OF ALLOYS AND COMPOUNDS
出版日期: 2017
卷号: 699, 页码:575-580
关键词: Anisotropic metal-insulator transition ; Anisotropic electronic transport ; Epitaxial strain ; Vanadium dioxide thin film ; Stripe domain structure
DOI: 10.1016/j.jallcom.2016.12.412
文章类型: 期刊论文
英文摘要: This work reports the thickness dependence of the anisotropic electronic transport in strained VO2/TiO2 (110) epitaxial thin films with the aim of exploring the strain-modulated metal-insulator transition (MIT). The MIT temperature varies from around 349 K-341 K while increasing the film thickness, which is higher than the bulk MIT temperature of 340 K. More importantly, the electrical transport property is anisotropic along the in-plane [100] and [1-10] directions and the anisotropy is further improved in thicker films. Using synchrotron radiation X-ray reciprocal space mapping (RSM) and atomic force microscopy, the thickness-dependent strain induces different stripe phase states in the VO2 thin films and thus the emergence of the distinctive anisotropic electronic transport in the vicinity of the MIT. These results provide a better understanding of the crystalline-facet-dependent strain modulation of the MIT and offer a guide for designing metamaterials based on the anisotropic features of VO2 thin films. (C) 2016 Elsevier B.V. All rights reserved.
收录类别: SCI
语种: 英语
WOS记录号: WOS:000393727500081
ISSN号: 0925-8388
Citation statistics:
内容类型: 期刊论文
URI标识: http://ir.sinap.ac.cn/handle/331007/27486
Appears in Collections:中科院上海应用物理研究所2011-2017年_期刊论文

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Recommended Citation:
Hu, K,Yang, YJ,Hong, B,et al. Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017-01-01,699:575-580.
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