CAS OpenIR  > 中科院上海应用物理研究所2011-2018年
Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films
Hu, K; Yang, YJ; Hong, B; Zhao, JT; Luo, ZL; Li, XG; Zhang, XM; Gu, YL; Gao, XY; Gao, C
2017
Source PublicationJOURNAL OF ALLOYS AND COMPOUNDS
ISSN0925-8388
Volume699Pages:575-580
Subtype期刊论文
AbstractThis work reports the thickness dependence of the anisotropic electronic transport in strained VO2/TiO2 (110) epitaxial thin films with the aim of exploring the strain-modulated metal-insulator transition (MIT). The MIT temperature varies from around 349 K-341 K while increasing the film thickness, which is higher than the bulk MIT temperature of 340 K. More importantly, the electrical transport property is anisotropic along the in-plane [100] and [1-10] directions and the anisotropy is further improved in thicker films. Using synchrotron radiation X-ray reciprocal space mapping (RSM) and atomic force microscopy, the thickness-dependent strain induces different stripe phase states in the VO2 thin films and thus the emergence of the distinctive anisotropic electronic transport in the vicinity of the MIT. These results provide a better understanding of the crystalline-facet-dependent strain modulation of the MIT and offer a guide for designing metamaterials based on the anisotropic features of VO2 thin films. (C) 2016 Elsevier B.V. All rights reserved.
KeywordAnisotropic Metal-insulator Transition Anisotropic Electronic Transport Epitaxial Strain Vanadium Dioxide Thin Film Stripe Domain Structure
DOI10.1016/j.jallcom.2016.12.412
Indexed BySCI
Language英语
WOS IDWOS:000393727500081
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/27486
Collection中科院上海应用物理研究所2011-2018年
Recommended Citation
GB/T 7714
Hu, K,Yang, YJ,Hong, B,et al. Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,699:575-580.
APA Hu, K.,Yang, YJ.,Hong, B.,Zhao, JT.,Luo, ZL.,...&Gao, C.(2017).Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films.JOURNAL OF ALLOYS AND COMPOUNDS,699,575-580.
MLA Hu, K,et al."Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films".JOURNAL OF ALLOYS AND COMPOUNDS 699(2017):575-580.
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