Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films

doi:10.1016/j.jallcom.2016.12.412

CAS OpenIR > 中科院上海应用物理研究所2011-2018年

	Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films
	Hu, K; Yang, YJ; Hong, B; Zhao, JT; Luo, ZL; Li, XG; Zhang, XM; Gu, YL; Gao, XY; Gao, C
	2017
发表期刊	JOURNAL OF ALLOYS AND COMPOUNDS
ISSN	0925-8388
卷号	699 页码:575-580
文章类型	期刊论文
摘要	This work reports the thickness dependence of the anisotropic electronic transport in strained VO2/TiO2 (110) epitaxial thin films with the aim of exploring the strain-modulated metal-insulator transition (MIT). The MIT temperature varies from around 349 K-341 K while increasing the film thickness, which is higher than the bulk MIT temperature of 340 K. More importantly, the electrical transport property is anisotropic along the in-plane [100] and [1-10] directions and the anisotropy is further improved in thicker films. Using synchrotron radiation X-ray reciprocal space mapping (RSM) and atomic force microscopy, the thickness-dependent strain induces different stripe phase states in the VO2 thin films and thus the emergence of the distinctive anisotropic electronic transport in the vicinity of the MIT. These results provide a better understanding of the crystalline-facet-dependent strain modulation of the MIT and offer a guide for designing metamaterials based on the anisotropic features of VO2 thin films. (C) 2016 Elsevier B.V. All rights reserved.
关键词	Anisotropic Metal-insulator Transition Anisotropic Electronic Transport Epitaxial Strain Vanadium Dioxide Thin Film Stripe Domain Structure
DOI	10.1016/j.jallcom.2016.12.412
收录类别	SCI
语种	英语
WOS记录号	WOS:000393727500081
引用统计	被引频次：4[WOS] [WOS记录] [WOS相关记录]
文献类型	期刊论文
条目标识符	http://ir.sinap.ac.cn/handle/331007/27486
专题	中科院上海应用物理研究所2011-2018年
推荐引用方式 GB/T 7714	Hu, K,Yang, YJ,Hong, B,et al. Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films[J]. JOURNAL OF ALLOYS AND COMPOUNDS,2017,699:575-580.
APA	Hu, K.,Yang, YJ.,Hong, B.,Zhao, JT.,Luo, ZL.,...&Gao, C.(2017).Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films.JOURNAL OF ALLOYS AND COMPOUNDS,699,575-580.
MLA	Hu, K,et al."Thickness-dependent anisotropy of metal-insulator transition in (110)-VO2/TiO2 epitaxial thin films".JOURNAL OF ALLOYS AND COMPOUNDS 699(2017):575-580.

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