Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric
Lei, B; Wang, NZ; Shang, C; Meng, FB; Ma, LK; Luo, XG; Wu, T; Sun, Z; Wang, Y; Jiang, Z; Mao, BH; Liu, Z; Yu, YJ; Zhang, YB; Chen, XH
2017
发表期刊PHYSICAL REVIEW B
ISSN2469-9950
卷号95期号:2页码:-
文章类型期刊论文
摘要We have developed a field-effect transistor (FET) device using a solid ion conductor (SIC) as the gate dielectric, which can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes and consequently control the physical properties and phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with T-c similar to 46.6 K for optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, by using a solid ion conductor as the gate dielectric, the SIC-FET device is able to induce much higher carrier doping in the bulk, suit many surface-sensitive experimental probes, and stabilize structural phases that are inaccessible in ordinary conditions.
DOI10.1103/PhysRevB.95.020503
收录类别SCI
语种英语
WOS记录号WOS:000400593700001
引用统计
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/27490
专题中科院上海应用物理研究所2011-2018年
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GB/T 7714
Lei, B,Wang, NZ,Shang, C,et al. Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric[J]. PHYSICAL REVIEW B,2017,95(2):-.
APA Lei, B.,Wang, NZ.,Shang, C.,Meng, FB.,Ma, LK.,...&Chen, XH.(2017).Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric.PHYSICAL REVIEW B,95(2),-.
MLA Lei, B,et al."Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric".PHYSICAL REVIEW B 95.2(2017):-.
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