CAS OpenIR  > 中科院上海应用物理研究所2011-2018年
Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric
Lei, B; Wang, NZ; Shang, C; Meng, FB; Ma, LK; Luo, XG; Wu, T; Sun, Z; Wang, Y; Jiang, Z; Mao, BH; Liu, Z; Yu, YJ; Zhang, YB; Chen, XH
2017
Source PublicationPHYSICAL REVIEW B
ISSN2469-9950
Volume95Issue:2Pages:-
Subtype期刊论文
AbstractWe have developed a field-effect transistor (FET) device using a solid ion conductor (SIC) as the gate dielectric, which can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes and consequently control the physical properties and phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with T-c similar to 46.6 K for optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, by using a solid ion conductor as the gate dielectric, the SIC-FET device is able to induce much higher carrier doping in the bulk, suit many surface-sensitive experimental probes, and stabilize structural phases that are inaccessible in ordinary conditions.
DOI10.1103/PhysRevB.95.020503
Indexed BySCI
Language英语
WOS IDWOS:000400593700001
Citation statistics
Cited Times:22[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/27490
Collection中科院上海应用物理研究所2011-2018年
Recommended Citation
GB/T 7714
Lei, B,Wang, NZ,Shang, C,et al. Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric[J]. PHYSICAL REVIEW B,2017,95(2):-.
APA Lei, B.,Wang, NZ.,Shang, C.,Meng, FB.,Ma, LK.,...&Chen, XH.(2017).Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric.PHYSICAL REVIEW B,95(2),-.
MLA Lei, B,et al."Tuning phase transitions in FeSe thin flakes by field-effect transistor with solid ion conductor as the gate dielectric".PHYSICAL REVIEW B 95.2(2017):-.
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