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| A Breakthrough Efficiency of 19.9% Obtained in Inverted Perovskite Solar Cells by Using an Efficient Trap State Passivator Cu(thiourea)I | |
| Ye, SY; Rao, HX; Zhao, ZR; Zhang, LJ; Bao, HL; Sun, WH; Li, YL; Gu, FD; Wang, JQ; Liu, ZW; Bian, ZQ; Huang, CH | |
| 2017 | |
| Source Publication | JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
 |
| ISSN | 0002-7863 |
| Volume | 139Issue:22Pages:7504-7512 |
| Subtype | 期刊论文 |
| Abstract | It is extremely significant to study the trap state passivation and minimize the trap states of perovskite to achieve high-performance perovskite solar cells (PSCs). Here, we have first revealed and demonstrated that a novel p-type conductor Cu(thiourea)I [Cu(Tu)I] incorporated in perovskite layer can effectively passivate the trap states of perovskite via interacting with the under-coordinated metal cations and halide anions at the perovskite crystal surface. The trap state energy level of perovskite can be shallowed from 0.35-0.45 eV to 0.25-0.35 eV. In addition, the incorporated Cu(Tu)I can participate in constructing the p-i bulk heterojunctions with perovskite, leading to an increase of the depletion width from 126 to 265 nm, which is advantageous for accelerating hole transport and reducing charge carrier recombination. For these two synergistic effects, Cu(Tu)I can play a much better role than that of the traditional p-type conductor CuI, probably due to its identical valence band maximum with that of perovskite, which enables to not only lower the trap state energy level to a greater extent but also eliminate the potential wells for holes at the p-i heterojunctions. After optimization, a breakthrough efficiency of 19.9% has been obtained in the inverted PSCs with Cu(Tu)I as the trap state passivator of perovskite. |
| Keyword | Lead Iodide Perovskites Hole-conductor-free Halide Perovskites Transporting Layer Photovoltaic Cells Low-temperature Fill-factor Thin-films Planar Performance |
| DOI | 10.1021/jacs.7b01439 |
| WOS Keyword | LEAD IODIDE PEROVSKITES ; HOLE-CONDUCTOR-FREE ; HALIDE PEROVSKITES ; TRANSPORTING LAYER ; PHOTOVOLTAIC CELLS ; LOW-TEMPERATURE ; FILL-FACTOR ; THIN-FILMS ; PLANAR ; PERFORMANCE |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000403136500013 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/28539 |
| Collection | 中科院上海应用物理研究所2011-2018年 |
| Recommended Citation GB/T 7714 | Ye, SY,Rao, HX,Zhao, ZR,et al. A Breakthrough Efficiency of 19.9% Obtained in Inverted Perovskite Solar Cells by Using an Efficient Trap State Passivator Cu(thiourea)I[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2017,139(22):7504-7512. |
| APA | Ye, SY.,Rao, HX.,Zhao, ZR.,Zhang, LJ.,Bao, HL.,...&Huang, CH.(2017).A Breakthrough Efficiency of 19.9% Obtained in Inverted Perovskite Solar Cells by Using an Efficient Trap State Passivator Cu(thiourea)I.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,139(22),7504-7512. |
| MLA | Ye, SY,et al."A Breakthrough Efficiency of 19.9% Obtained in Inverted Perovskite Solar Cells by Using an Efficient Trap State Passivator Cu(thiourea)I".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 139.22(2017):7504-7512. |
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| A Breakthrough Effic（2493KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Download | |
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