A Breakthrough Efficiency of 19.9% Obtained in Inverted Perovskite Solar Cells by Using an Efficient Trap State Passivator Cu(thiourea)I

doi:10.1021/jacs.7b01439

CAS OpenIR > 中科院上海应用物理研究所2011-2019年

	A Breakthrough Efficiency of 19.9% Obtained in Inverted Perovskite Solar Cells by Using an Efficient Trap State Passivator Cu(thiourea)I
	Ye, SY; Rao, HX; Zhao, ZR; Zhang, LJ; Bao, HL; Sun, WH; Li, YL; Gu, FD; Wang, JQ; Liu, ZW; Bian, ZQ; Huang, CH
	2017
Source Publication	JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
ISSN	0002-7863
Volume	139 Issue:22 Pages:7504-7512
Subtype	期刊论文
Abstract	It is extremely significant to study the trap state passivation and minimize the trap states of perovskite to achieve high-performance perovskite solar cells (PSCs). Here, we have first revealed and demonstrated that a novel p-type conductor Cu(thiourea)I [Cu(Tu)I] incorporated in perovskite layer can effectively passivate the trap states of perovskite via interacting with the under-coordinated metal cations and halide anions at the perovskite crystal surface. The trap state energy level of perovskite can be shallowed from 0.35-0.45 eV to 0.25-0.35 eV. In addition, the incorporated Cu(Tu)I can participate in constructing the p-i bulk heterojunctions with perovskite, leading to an increase of the depletion width from 126 to 265 nm, which is advantageous for accelerating hole transport and reducing charge carrier recombination. For these two synergistic effects, Cu(Tu)I can play a much better role than that of the traditional p-type conductor CuI, probably due to its identical valence band maximum with that of perovskite, which enables to not only lower the trap state energy level to a greater extent but also eliminate the potential wells for holes at the p-i heterojunctions. After optimization, a breakthrough efficiency of 19.9% has been obtained in the inverted PSCs with Cu(Tu)I as the trap state passivator of perovskite.
Keyword	Lead Iodide Perovskites Hole-conductor-free Halide Perovskites Transporting Layer Photovoltaic Cells Low-temperature Fill-factor Thin-films Planar Performance
DOI	10.1021/jacs.7b01439
Indexed By	SCI
WOS Keyword	LEAD IODIDE PEROVSKITES ; HOLE-CONDUCTOR-FREE ; HALIDE PEROVSKITES ; TRANSPORTING LAYER ; PHOTOVOLTAIC CELLS ; LOW-TEMPERATURE ; FILL-FACTOR ; THIN-FILMS ; PLANAR ; PERFORMANCE
Language	英语
WOS ID	WOS:000403136500013
Citation statistics	Cited Times:108[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.sinap.ac.cn/handle/331007/28539
Collection	中科院上海应用物理研究所2011-2019年
Recommended Citation GB/T 7714	Ye, SY,Rao, HX,Zhao, ZR,et al. A Breakthrough Efficiency of 19.9% Obtained in Inverted Perovskite Solar Cells by Using an Efficient Trap State Passivator Cu(thiourea)I[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,2017,139(22):7504-7512.
APA	Ye, SY.,Rao, HX.,Zhao, ZR.,Zhang, LJ.,Bao, HL.,...&Huang, CH.(2017).A Breakthrough Efficiency of 19.9% Obtained in Inverted Perovskite Solar Cells by Using an Efficient Trap State Passivator Cu(thiourea)I.JOURNAL OF THE AMERICAN CHEMICAL SOCIETY,139(22),7504-7512.
MLA	Ye, SY,et al."A Breakthrough Efficiency of 19.9% Obtained in Inverted Perovskite Solar Cells by Using an Efficient Trap State Passivator Cu(thiourea)I".JOURNAL OF THE AMERICAN CHEMICAL SOCIETY 139.22(2017):7504-7512.

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