CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation
Cheng, GD; Chen, Y; Yan, L; Shen, RF
2017
Source PublicationNUCLEAR SCIENCE AND TECHNIQUES
ISSN1001-8042
Volume28Issue:8Pages:-
Subtype期刊论文
AbstractRadiation damage in 4H-SiC samples implanted by 70 keV oxygen ion beams was studied using photoluminescence and electron spin resonance techniques. ESR peak of g = 2.0053 and two zero-phonon lines were observed with the implanted samples. Combined with theoretical calculations, we found that the main defect in the implanted 4H-SiC samples was oxygen-vacancy complex. The calculated defect formation energies showed that the oxygen-vacancy centers were stable in n-type 4H-SiC. Moreover, the VSiOC0 and VSiOC-1 centers were optically addressable. The results suggest promising spin coherence properties for quantum information science.
KeywordDiamond
DOI10.1007/s41365-017-0263-2
Indexed BySCI
WOS KeywordDIAMOND
Language英语
WOS IDWOS:000408789500008
Citation statistics
Cited Times:1[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/28771
Collection中科院上海应用物理研究所2011-2019年
Recommended Citation
GB/T 7714
Cheng, GD,Chen, Y,Yan, L,et al. PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation[J]. NUCLEAR SCIENCE AND TECHNIQUES,2017,28(8):-.
APA Cheng, GD,Chen, Y,Yan, L,&Shen, RF.(2017).PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation.NUCLEAR SCIENCE AND TECHNIQUES,28(8),-.
MLA Cheng, GD,et al."PL and ESR study for defect centers in 4H-SiC induced by oxygen ion implantation".NUCLEAR SCIENCE AND TECHNIQUES 28.8(2017):-.
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