Theory of sulfur-vacancy defect in diamond: a comparable NV-1 isoelectronic center
Cheng, GD; Huang, Q; Shen, YH; Huang, HF; Yan, L
2017
发表期刊OPTIK
ISSN0030-4026
卷号136期号:-页码:151-156
文章类型期刊论文
摘要A color center in diamond which is a comparable NV-1 isoelectronic center is predicted based on first-principles electronic structure calculations. The defect consists of a substitutional sulfur and an adjacent carbon vacancy (S-V). We find that the S-V center is optically accessible with two zero-phonon line of about 1.12 and 1.22 eV. The S-V center also shares many of the characteristics of the NV-1 center in diamond. A prominent spin coherence time is predicted by combining first-principles calculations and a mean-field theory for spin hyperfine interaction, and is at the same level with that of NV-1 center in diamond. Furthermore, the neutral S-V center in diamond provides more degrees of freedom for spin manipulation than the NV-1 center in diamond. (C) 2017 Elsevier GmbH. All rights reserved.
DOI10.1016/j.ijleo.2017.02.027
收录类别SCI
语种英语
WOS记录号WOS:000403124300021
引用统计
被引频次:1[WOS]   [WOS记录]     [WOS相关记录]
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/28874
专题中科院上海应用物理研究所2011-2018年
推荐引用方式
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Cheng, GD,Huang, Q,Shen, YH,et al. Theory of sulfur-vacancy defect in diamond: a comparable NV-1 isoelectronic center[J]. OPTIK,2017,136(-):151-156.
APA Cheng, GD,Huang, Q,Shen, YH,Huang, HF,&Yan, L.(2017).Theory of sulfur-vacancy defect in diamond: a comparable NV-1 isoelectronic center.OPTIK,136(-),151-156.
MLA Cheng, GD,et al."Theory of sulfur-vacancy defect in diamond: a comparable NV-1 isoelectronic center".OPTIK 136.-(2017):151-156.
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