3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals

doi:10.1126/science.aaq1479

CAS OpenIR > 中科院上海应用物理研究所2011-2018年

	3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals
	Chang, C ; Wu, MH ; He, DS ; Pei, YL ; Wu, CF ; Wu, XF ; Yu, HL ; Zhu, FY ; Wang, KD ; Chen, Y ; Huang, L ; Li, JF ; He, JQ ; Zhao, LD
	2018
发表期刊	SCIENCE
ISSN	0036-8075
卷号	360 期号:6390 页码:778-782
文章类型	期刊论文
摘要	Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT. Here we show a maximum ZT of similar to 2.8 +/- 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.
关键词	High-thermoelectric Performance Thermal-conductivity Single-crystals Bulk Thermoelectrics Efficiency Enhancement Temperature Scattering Distortion Mechanism
DOI	10.1126/science.aaq1479
收录类别	SCI
语种	英语
WOS记录号	WOS:000432473500046
引用统计
文献类型	期刊论文
条目标识符	http://ir.sinap.ac.cn/handle/331007/28900
专题	中科院上海应用物理研究所2011-2018年
作者单位	1.Chang, C 2.Wu, MH 3.He, DS 4.Pei, YL 5.Wu, CF 6.Wu, XF 7.Yu, HL 8.Zhu, FY 9.Wang, KD 10.Chen, Y 11.Huang, L 12.Li, JF 13.He, JQ 14.Zhao, LD
推荐引用方式 GB/T 7714	Chang, C,Wu, MH,He, DS,et al. 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals[J]. SCIENCE,2018,360(6390):778-782.
APA	Chang, C.,Wu, MH.,He, DS.,Pei, YL.,Wu, CF.,...&Zhao, LD.(2018).3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals.SCIENCE,360(6390),778-782.
MLA	Chang, C,et al."3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals".SCIENCE 360.6390(2018):778-782.

条目包含的文件		下载所有文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
3D charge and 2D pho（1228KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	浏览下载