CAS OpenIR  > 中科院上海应用物理研究所2011-2018年
3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals
Chang, C; Wu, MH; He, DS; Pei, YL; Wu, CF; Wu, XF; Yu, HL; Zhu, FY; Wang, KD; Chen, Y; Huang, L; Li, JF; He, JQ; Zhao, LD
2018
Source PublicationSCIENCE
ISSN0036-8075
Volume360Issue:6390Pages:778-782
Subtype期刊论文
AbstractThermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT. Here we show a maximum ZT of similar to 2.8 +/- 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.
KeywordHigh-thermoelectric Performance Thermal-conductivity Single-crystals Bulk Thermoelectrics Efficiency Enhancement Temperature Scattering Distortion Mechanism
DOI10.1126/science.aaq1479
Indexed BySCI
Language英语
WOS IDWOS:000432473500046
Citation statistics
Cited Times:98[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/28900
Collection中科院上海应用物理研究所2011-2018年
Affiliation1.Chang, C
2.Wu, MH
3.He, DS
4.Pei, YL
5.Wu, CF
6.Wu, XF
7.Yu, HL
8.Zhu, FY
9.Wang, KD
10.Chen, Y
11.Huang, L
12.Li, JF
13.He, JQ
14.Zhao, LD
Recommended Citation
GB/T 7714
Chang, C,Wu, MH,He, DS,et al. 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals[J]. SCIENCE,2018,360(6390):778-782.
APA Chang, C.,Wu, MH.,He, DS.,Pei, YL.,Wu, CF.,...&Zhao, LD.(2018).3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals.SCIENCE,360(6390),778-782.
MLA Chang, C,et al."3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals".SCIENCE 360.6390(2018):778-782.
Files in This Item: Download All
File Name/Size DocType Version Access License
3D charge and 2D pho(1228KB)期刊论文作者接受稿开放获取CC BY-NC-SAView Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[Chang, C]'s Articles
[Wu, MH]'s Articles
[He, DS]'s Articles
Baidu academic
Similar articles in Baidu academic
[Chang, C]'s Articles
[Wu, MH]'s Articles
[He, DS]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Chang, C]'s Articles
[Wu, MH]'s Articles
[He, DS]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals.pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.