3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals

doi:10.1126/science.aaq1479

CAS OpenIR > 中科院上海应用物理研究所2011-2019年

	3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals
	Chang, C ; Wu, MH ; He, DS ; Pei, YL ; Wu, CF ; Wu, XF ; Yu, HL ; Zhu, FY ; Wang, KD ; Chen, Y ; Huang, L ; Li, JF ; He, JQ ; Zhao, LD
	2018
Source Publication	SCIENCE
ISSN	0036-8075
Volume	360 Issue:6390 Pages:778-782
Subtype	期刊论文
Abstract	Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT. Here we show a maximum ZT of similar to 2.8 +/- 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.
Keyword	High-thermoelectric Performance Thermal-conductivity Single-crystals Bulk Thermoelectrics Efficiency Enhancement Temperature Scattering Distortion Mechanism
DOI	10.1126/science.aaq1479
Indexed By	SCI
Language	英语
WOS ID	WOS:000432473500046
Citation statistics	Cited Times:274[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.sinap.ac.cn/handle/331007/28900
Collection	中科院上海应用物理研究所2011-2019年
Affiliation	1.Chang, C 2.Wu, MH 3.He, DS 4.Pei, YL 5.Wu, CF 6.Wu, XF 7.Yu, HL 8.Zhu, FY 9.Wang, KD 10.Chen, Y 11.Huang, L 12.Li, JF 13.He, JQ 14.Zhao, LD
Recommended Citation GB/T 7714	Chang, C,Wu, MH,He, DS,et al. 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals[J]. SCIENCE,2018,360(6390):778-782.
APA	Chang, C.,Wu, MH.,He, DS.,Pei, YL.,Wu, CF.,...&Zhao, LD.(2018).3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals.SCIENCE,360(6390),778-782.
MLA	Chang, C,et al."3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals".SCIENCE 360.6390(2018):778-782.

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