Knowledge Management System Of Shanghai Institute of Applied Physics, CAS
| 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals | |
| Chang, C; Wu, MH; He, DS; Pei, YL; Wu, CF; Wu, XF; Yu, HL; Zhu, FY; Wang, KD; Chen, Y; Huang, L; Li, JF; He, JQ; Zhao, LD | |
| 2018 | |
| Source Publication | SCIENCE
 |
| ISSN | 0036-8075 |
| Volume | 360Issue:6390Pages:778-782 |
| Subtype | 期刊论文 |
| Abstract | Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT. Here we show a maximum ZT of similar to 2.8 +/- 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties. |
| Keyword | High-thermoelectric Performance Thermal-conductivity Single-crystals Bulk Thermoelectrics Efficiency Enhancement Temperature Scattering Distortion Mechanism |
| DOI | 10.1126/science.aaq1479 |
| Indexed By | SCI |
| Language | 英语 |
| WOS ID | WOS:000432473500046 |
| Citation statistics | |
| Document Type | 期刊论文 |
| Identifier | http://ir.sinap.ac.cn/handle/331007/28900 |
| Collection | 中科院上海应用物理研究所2011-2019年 |
| Affiliation | 1.Chang, C 2.Wu, MH 3.He, DS 4.Pei, YL 5.Wu, CF 6.Wu, XF 7.Yu, HL 8.Zhu, FY 9.Wang, KD 10.Chen, Y 11.Huang, L 12.Li, JF 13.He, JQ 14.Zhao, LD |
| Recommended Citation GB/T 7714 | Chang, C,Wu, MH,He, DS,et al. 3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals[J]. SCIENCE,2018,360(6390):778-782. |
| APA | Chang, C.,Wu, MH.,He, DS.,Pei, YL.,Wu, CF.,...&Zhao, LD.(2018).3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals.SCIENCE,360(6390),778-782. |
| MLA | Chang, C,et al."3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals".SCIENCE 360.6390(2018):778-782. |
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 3D charge and 2D pho（1228KB） | 期刊论文 | 作者接受稿 | 开放获取 | CC BY-NC-SA | View Application Full Text | |
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment