Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition
Tai, LX; Zhu, DM; Liu, X; Yang, TY; Wang, L; Wang, R; Jiang, S; Chen, ZH; Xu, ZM; Li, XL
2018
发表期刊NANO-MICRO LETTERS
ISSN2311-6706
卷号10期号:2页码:-
文章类型期刊论文
摘要The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [GRAPHICS]
关键词Single-crystal Graphene Heterojunction Solar-cells Hexagonal Boron-nitride High-quality Layer Growth Cvd Growth Films Catalyst Copper Surface
DOI10.1007/s40820-017-0173-1
收录类别SCI
语种英语
WOS记录号WOS:000425093800003
引用统计
文献类型期刊论文
条目标识符http://ir.sinap.ac.cn/handle/331007/28972
专题中科院上海应用物理研究所2011-2018年
作者单位1.Tai, LX
2.Zhu, DM
3.Liu, X
4.Yang, TY
5.Wang, L
6.Wang, R
7.Jiang, S
8.Chen, ZH
9.Xu, ZM
10.Li, XL
推荐引用方式
GB/T 7714
Tai, LX,Zhu, DM,Liu, X,et al. Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition[J]. NANO-MICRO LETTERS,2018,10(2):-.
APA Tai, LX.,Zhu, DM.,Liu, X.,Yang, TY.,Wang, L.,...&Li, XL.(2018).Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition.NANO-MICRO LETTERS,10(2),-.
MLA Tai, LX,et al."Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition".NANO-MICRO LETTERS 10.2(2018):-.
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