Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire

doi:10.1021/acs.jpcc.7b10666

CAS OpenIR > 中科院上海应用物理研究所2011-2018年

	Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire
	Wu, D ; Yang, YG ; Zhu, P ; Zheng, XM ; Chen, XL ; Shi, J ; Song, F ; Gao, XY ; Zhang, XA ; Ouyang, FP ; Xiong, X ; Gao, YL ; Huang, H
	2018
Source Publication	JOURNAL OF PHYSICAL CHEMISTRY C
ISSN	1932-7447
Volume	122 Issue:3 Pages:1860-1866
Subtype	期刊论文
Abstract	Molybdenum dioxide (MoO2) has attracted many interests due to its unique properties and potential applications. Here, we report the synthesis of high quality MoO2@MoS2 nanorods on c-sapphire substrates through an atmospheric pressure chemical vapor deposition (APCVD) approach. Optical microscopy (OM), cross-sectional scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and (grazing incidence) X-ray diffraction ((GI)XRD) measurements reveal that these MoO2 nanorods exhibit epitaxial growth behaviors on c-sapphire substrates with the orientation relationship of MoO2(100)parallel to sapphire(0001) and MoO2 < 001 > aligned well with sapphire < 1010 >. Raman spectroscopy/imaging, energy dispersive spectroscopy (EDS), and GIXRD results disclose that such MoO2 nanorods are wrapped by MoS2 (MoO2@MoS2). Devices based on transferred individual MoO2@MoS2 nanorods show a resistivity of similar to 1.65 X 10(-4) Omega.cm, comfirming that such nanorods possess higher crystalline degree. Our findings will be helpful for the applications of MoO2@MoS2 in the fields of nanoelectronic devices.
Keyword	Chemical-vapor-deposition Hydrogen Evolution Reaction Moo2 Nanorods Raman-spectroscopy Mos2 Nanosheets Layer Mos2 Thin-films Performance Moo2/mos2 Graphene
DOI	10.1021/acs.jpcc.7b10666
Indexed By	SCI
Language	英语
WOS ID	WOS:000423652700047
Citation statistics	Cited Times:6[WOS] [WOS Record] [Related Records in WOS]
Document Type	期刊论文
Identifier	http://ir.sinap.ac.cn/handle/331007/29004
Collection	中科院上海应用物理研究所2011-2018年
Affiliation	1.Wu, D 2.Yang, YG 3.Zhu, P 4.Zheng, XM 5.Chen, XL 6.Shi, J 7.Song, F 8.Gao, XY 9.Zhang, XA 10.Ouyang, FP 11.Xiong, X 12.Gao, YL 13.Huang, H
Recommended Citation GB/T 7714	Wu, D,Yang, YG,Zhu, P,et al. Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2018,122(3):1860-1866.
APA	Wu, D.,Yang, YG.,Zhu, P.,Zheng, XM.,Chen, XL.,...&Huang, H.(2018).Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire.JOURNAL OF PHYSICAL CHEMISTRY C,122(3),1860-1866.
MLA	Wu, D,et al."Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire".JOURNAL OF PHYSICAL CHEMISTRY C 122.3(2018):1860-1866.

Files in This Item:
File Name/Size	DocType	Version	Access	License
Epitaxial Growth of （4159KB）	期刊论文	作者接受稿	开放获取	CC BY-NC-SA	View Download

File name:	Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire.pdf
Format:	Adobe PDF

If you have any objections to this item, please fill out the form below and the administrator will contact you as soon as possible.
Content:
Email：	*
Institution:
Verification Code:	Refresh

Any comments and suggestions are welcomed.
Title:	*
Content:
Email：	*
Verification Code:	Refresh

中国科学院上海应用物理研究所机构知识库