CAS OpenIR  > 中科院上海应用物理研究所2011-2018年
Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire
Wu, D; Yang, YG; Zhu, P; Zheng, XM; Chen, XL; Shi, J; Song, F; Gao, XY; Zhang, XA; Ouyang, FP; Xiong, X; Gao, YL; Huang, H
2018
Source PublicationJOURNAL OF PHYSICAL CHEMISTRY C
ISSN1932-7447
Volume122Issue:3Pages:1860-1866
Subtype期刊论文
AbstractMolybdenum dioxide (MoO2) has attracted many interests due to its unique properties and potential applications. Here, we report the synthesis of high quality MoO2@MoS2 nanorods on c-sapphire substrates through an atmospheric pressure chemical vapor deposition (APCVD) approach. Optical microscopy (OM), cross-sectional scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), selected area electron diffraction (SAED), and (grazing incidence) X-ray diffraction ((GI)XRD) measurements reveal that these MoO2 nanorods exhibit epitaxial growth behaviors on c-sapphire substrates with the orientation relationship of MoO2(100)parallel to sapphire(0001) and MoO2 < 001 > aligned well with sapphire < 1010 >. Raman spectroscopy/imaging, energy dispersive spectroscopy (EDS), and GIXRD results disclose that such MoO2 nanorods are wrapped by MoS2 (MoO2@MoS2). Devices based on transferred individual MoO2@MoS2 nanorods show a resistivity of similar to 1.65 X 10(-4) Omega.cm, comfirming that such nanorods possess higher crystalline degree. Our findings will be helpful for the applications of MoO2@MoS2 in the fields of nanoelectronic devices.
KeywordChemical-vapor-deposition Hydrogen Evolution Reaction Moo2 Nanorods Raman-spectroscopy Mos2 Nanosheets Layer Mos2 Thin-films Performance Moo2/mos2 Graphene
DOI10.1021/acs.jpcc.7b10666
Indexed BySCI
Language英语
WOS IDWOS:000423652700047
Citation statistics
Cited Times:6[WOS]   [WOS Record]     [Related Records in WOS]
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/29004
Collection中科院上海应用物理研究所2011-2018年
Affiliation1.Wu, D
2.Yang, YG
3.Zhu, P
4.Zheng, XM
5.Chen, XL
6.Shi, J
7.Song, F
8.Gao, XY
9.Zhang, XA
10.Ouyang, FP
11.Xiong, X
12.Gao, YL
13.Huang, H
Recommended Citation
GB/T 7714
Wu, D,Yang, YG,Zhu, P,et al. Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire[J]. JOURNAL OF PHYSICAL CHEMISTRY C,2018,122(3):1860-1866.
APA Wu, D.,Yang, YG.,Zhu, P.,Zheng, XM.,Chen, XL.,...&Huang, H.(2018).Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire.JOURNAL OF PHYSICAL CHEMISTRY C,122(3),1860-1866.
MLA Wu, D,et al."Epitaxial Growth of Highly Oriented Metallic MoO2@MoS2 Nanorods on C-sapphire".JOURNAL OF PHYSICAL CHEMISTRY C 122.3(2018):1860-1866.
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