CAS OpenIR  > 中科院上海应用物理研究所2011-2019年
Structural and electronic properties of atomically thin Bismuth on Au(111)
He, BC; Tian, G; Gou, J; Liu, BX; Shen, KC; Tian, QW; Yu, ZQ; Song, F; Xie, HP; Gao, YL; Lu, YH; Wu, KH; Chen, L; Huang, H
2019
Source PublicationSURFACE SCIENCE
ISSN0039-6028
Volume679Issue:-Pages:147—153
Subtype期刊论文
AbstractAtomically thin Bismuth (Bi) films are predicated to be candidates for high temperature quantum spin hall materials. Here, we reported the structural evolutions and the corresponding electronic properties of Bi ultrathin films on Au(111) at initial stage as a function of coverage using low-energy electron diffraction (LEED), scanning tunneling microscopy (STM) and photoemission spectroscopy (PES). The small window for a stable two dimensional (2D) Bi in Kagome and honeycomb lattice on Au(111) has been optimized. LEED and STM results show that Bi atoms self-assemble into dimered (5 x 5) superdots, (root 37 x root 37)R25. 3 degrees in a Kagome lattice and (p x root 3) stripes sequentially in the first monolayer regime and into bi-layered Bi (110) islands afterwards. UPS results show the disappearance of Au(111) surface states at coverage of 0.18 ML, revealing the Van der Waals interactions between Au(111) and Bi adatoms. The repulsive interactions between Bi atoms prevent the 2D Bi structure from islands forming at initial stage and benefit large domains in (root 37 x root 37)R25. 3 degrees Kagome lattice. Such 2D Bi may be interesting because of its relevance in terms of novel physical properties.
KeywordULTRAVIOLET PHOTOEMISSION EPITAXIAL GRAPHENE MOLECULES MONOLAYERS SYSTEMS GROWTH
DOI10.1016/j.susc.2018.09.005
Indexed BySCI
Language英语
Citation statistics
Document Type期刊论文
Identifierhttp://ir.sinap.ac.cn/handle/331007/31828
Collection中科院上海应用物理研究所2011-2019年
Affiliation1.Cent S Univ, Coll Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Hunan, Peoples R China;
2.Cent S Univ, State Key Lab Powder Met, Changsha 410083, Hunan, Peoples R China;
3.Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China;
4.Chinese Acad Sci, Shanghai Inst Appl Phys, Shanghai Synchrotron Radiat Facil, Pudong New Area, 239 Zhangheng Rd, Shanghai 201204, Peoples R China;
5.Univ Rochester, Dept Phys & Astron, Rochester, NY 14627 USA;
6.Zhejiang Univ, Coll Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
Recommended Citation
GB/T 7714
He, BC,Tian, G,Gou, J,et al. Structural and electronic properties of atomically thin Bismuth on Au(111)[J]. SURFACE SCIENCE,2019,679(-):147—153.
APA He, BC.,Tian, G.,Gou, J.,Liu, BX.,Shen, KC.,...&Huang, H.(2019).Structural and electronic properties of atomically thin Bismuth on Au(111).SURFACE SCIENCE,679(-),147—153.
MLA He, BC,et al."Structural and electronic properties of atomically thin Bismuth on Au(111)".SURFACE SCIENCE 679.-(2019):147—153.
Files in This Item: Download All
File Name/Size DocType Version Access License
Structural and elect(2665KB)期刊论文出版稿开放获取CC BY-NC-SAView Download
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[He, BC]'s Articles
[Tian, G]'s Articles
[Gou, J]'s Articles
Baidu academic
Similar articles in Baidu academic
[He, BC]'s Articles
[Tian, G]'s Articles
[Gou, J]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[He, BC]'s Articles
[Tian, G]'s Articles
[Gou, J]'s Articles
Terms of Use
No data!
Social Bookmark/Share
File name: Structural and electronic properties of atomically thin Bismuth on Au(111).pdf
Format: Adobe PDF
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.